Evaporation method, evaporation device and method of fabricating light emitting device

ABSTRACT

The invention provides an evaporation apparatus, which is able to improve an efficiency of evaporation materials, uniformity of deposited films, and throughput of the evaporation process. Disclosed is an evaporation source holder, which is installed in an evaporation chamber and configured to hold an evaporation material, and a moving mechanism, which is configured to move the evaporation source holder during evaporation of the evaporation material. The evaporation apparatus is further characterized by a shutter over the evaporation source holder, a filter over the shutter, and a heater surrounding the filter.

BACKGROUND OF THE INVENTION

The present invention relates to a deposition device for depositingmaterials which can be deposited by evaporation (hereinafter, anevaporation material), and a manufacturing method of a light emittingdevice typified by OLED that is formed using the deposition device.Specifically, the present invention relates to a vacuum-evaporationmethod and an evaporation device that conducts deposition by evaporatingan evaporation material from a plurality of evaporation sources providedto face a substrate.

In recent years, research related to a light emitting device having anEL element as a self-luminous light emitting element has been activated.The light emitting device is referred to as EL display or light emittingdiode (LED). Since these light emitting devices have characteristicssuch as rapid speed of response that is suitable for movie display, lowvoltage, low power consumption driving, or the like, they attracts anattention for a next generation display including new generation'scellular phones and portable information terminals (PDA).

The EL element has a structure that an organic compound-containing layer(hereinafter, an EL layer) is sandwiched between an anode and a cathode.Electra luminescence is generated in the EL layer by applying anelectronic field to the anode and the cathode. Luminescence obtainedfrom the EL element includes light emission in returning to a base statefrom singlet excitation (fluorescence) and light emission in returningto a base state from triplet excitation (phosphorescence).

Above EL layer has a laminated structure typified by “a holetransporting layer, a light emitting layer, an electron transportinglayer” proposed by Tang et el. of Kodak Eastman Company. An EL materialfor forming an EL layer is classified broadly into a low-molecular(monomer) material and high-molecular (polymer) material. Thelow-molecular material is deposited using the evaporation apparatusshown in FIG. 14.

The evaporation apparatus shown in FIG. 14 has a substrate holder 1403installed on a substrate, a melting pot 1401 encapsulated an ELmaterial, an evaporation material, a shutter 1402 for prevention ofrising an EL material that will be sublimed, and a heater (not shown)for heating an EL material in a melting pot. Then, an EL material heatedby the heater is sublimed and deposited on a rolling substrate. At thistime, in order to deposit uniformly, the substrate and the melting potis necessary to have a distance therebetween at least 1 m.

According to the above-described evaporation device and theabove-described vacuum evaporation method, when the EL layer is formedby vacuum evaporation, almost all of the sublimated EL material isadhered to an inner wall, a shutter or an adherence preventive shield(protective plate for preventing a vacuum evaporation material fromadhering to an inner wall of a deposition chamber) at inside of thedeposition chamber of the evaporation device. Therefore, in forming theEL layer, an efficiency of utilizing the expensive EL material is asextremely low as about 1% or smaller and fabricating cost of a lightemitting device becomes very expensive.

Further, according to the evaporation device of the related art, inorder to provide a uniform film, it is necessary to separate a substratefrom an evaporation source by an interval equal to or larger than 1 m.Therefore, the evaporation device per se becomes large-sized, a timeperiod required for emptying gas from each deposition chamber of theevaporation device is prolonged and therefore, a deposition rate isretarded and throughput is lowered. Further, the evaporation device isof a structure of rotating the substrate and therefore, there is a limitin the evaporation device aiming at a large area substrate.

Further, the EL material poses a problem of being deteriorated by beingeasily oxidized by presence of oxygen or water. However, in forming afilm by an evaporation method, a predetermined amount of an evaporationmaterial put into a vessel (glass bottle) is taken out and transferredto a vessel (representatively, crucible, or evaporation boat) installedat a position opposed to an object to be formed with a film at inside ofan evaporation device stem and there is a concern that the evaporationmaterial is mixed with oxygen or water or an impurity in thetransferring operation.

Further, when the evaporation material is transferred from the glassbottle to the vessel, the evaporation material is transferred by thehuman hand at inside of a pretreatment chamber of a deposition chamberprovided with a glove or the like. However, when the glove is providedat the pretreatment chamber, vacuum cannot be constituted, the operationis carried out under atmospheric pressure and there is a highpossibility of mixing an impurity. For example, even when thetransferring operation is carried out at inside of the pretreatmentchamber subjected under a nitrogen atmosphere, it is difficult to reducemoisture or oxygen as less as possible. Further, although it isconceivable to use a robot, since the evaporation material is in apowder-like shape, it is very difficult to fabricate the robot forcarrying out the transferring operation. Therefore, it is difficult toconstitute steps of forming an EL element, that is, from a step offorming an EL layer above a lower electrode to a step of forming anupper electrode by an integrated closed system enabling to avoid mixingof an impurity.

SUMMARY OF THE INVENTION

Hence, the invention provides an evaporation device which is adeposition device promoting an efficiency of utilizing an EL materialand forming film excellent in uniformity or throughput of forming an ELlayer and an evaporation method therefor. Further, the inventionprovides a light emitting device fabricated by the evaporation deviceand the evaporation method according to the invention and a method offabricating the light emitting device.

Further, the invention provides a method of subjecting an EL material toevaporation efficiently to a large area substrate having a substratesize of, for example, 320 mm×400 mm, 370 mm×470 mm, 550 mm×650 mm, 600mm×720 mm, 680 mm×880 mm, 1000 mm×1200 mm, 1100 mm×1250 mm or 1150mm×1300 mm.

Further, the invention provides a fabricating device capable of avoidingan impurity from mixing to an EL material.

In order to achieve the above-described object, the invention providesan evaporation device featured in that a substrate and an evaporationsource are moved relative to each other. That is, the invention ischaracterized in that in an evaporation device, an evaporation sourceholder installed with a vessel filled with an evaporation material ismoved by a certain pitch relative to a substrate or the substrate ismoved by a certain pitch relative to the evaporation source. Further, itis preferable to move the evaporation source holder by a certain pitchto overlap ends (skirts) of a sublimated evaporation material.

Although a single or a plurality of the evaporation source holders maybe constituted, when the evaporation source holders are provided forrespective laminated films of EL layers, evaporation can be carried outefficiently and continuously. Further, a single or a plurality ofvessels may be installed at the evaporation source holder and aplurality of vessels filled with the same evaporation material may beinstalled. Further, when vessels having different evaporation materialsare arranged, a film can be formed at a substrate in a state of mixingthe sublimated evaporation materials (this is referred to as commonevaporation).

Next, an explanation will be given of an outline of a path for moving asubstrate and an evaporation source according to the invention relativeto each other. Further, although the explanation will be given by anexample of moving the evaporation source holder relative to thesubstrate in reference to FIGS. 2A and 2B, according to the invention,the substrate and the evaporation source may be moved relative to eachother and the path of moving the evaporation source holder is notlimited to those in FIGS. 2A and 2B. Further, although the explanationwill be given of a case of four evaporation source holders A, B, C andD, any number of the evaporation source holders may naturally beprovided.

FIG. 2A illustrates a substrate 13, evaporation source holders A, B, Cand D installed with evaporation sources, and a path for moving theevaporation source holders A, B, C and D relative to the substrate.First, the evaporation source holder A is moved successively in an Xaxis direction to finish forming a film in the X axis direction as shownby a broken line. Next, the evaporation source holder A is movedsuccessively in a Y axis direction and stopped at a position of a dottedline after finishing to form a film in the Y axis direction. Thereafter,the evaporation source holders B, C and D are successively movedsimilarly in the X axis direction to finish forming films in the X axisdirection similarly. Next, the evaporation source holders B, C and D aresuccessively moved in the Y axis direction and stopped after finishingto form films in the Y axis direction. Further, the evaporation holdermay start moving from the Y axis direction and the path of moving theevaporation source holder is not limited to that of FIG. 2A. Further,the evaporation source holder may move alternately in the X axisdirection and the Y axis direction. Further, by moving the evaporationsource holder on an outer side of the substrate, evaporation to an endregion of the substrate can be made uniform. Further, in order to makethe evaporation to the end region of the substrate uniform, speed ofmoving at the end region may be made slower than that at a centralregion thereof.

Further, each evaporation source holder returns to an original positionand starts evaporation for a succeeding substrate. A timing of returningeach evaporation source holder to the original position may be a timingafter forming the film and before successively forming the film and maybe in the midst of forming a film by other evaporation source holder.Further, evaporation may be started for a succeeding substrate from aposition at which each evaporation source holder is stopped. Although atime period of reciprocating the evaporation source holder once maypertinently be set by a person for embodying the invention, 5 through 15minutes are preferable.

Next, a path different from that of FIG. 2A will be explained inreference to FIG. 2B. In reference to FIG. 2B, the evaporation sourceholder A is moved successively in the Y axis direction and movedsuccessively in the X axis direction as shown by a broken line andstopped on a rear side of the evaporation source holder D as shown by adotted line. Thereafter, the evaporation source holders B, C and D aremoved in the X axis direction as shown by the broken line andsuccessively moved in the Y axis direction similarly and stopped on rearsides of preceding ones of the evaporation source holders afterfinishing to form films.

By setting the path such that the evaporation source holder returns tothe original position in this way, there is not unnecessary movement ofthe evaporation source holder and the deposition speed can be increasedand therefore, the throughput of the light emitting device can bepromoted.

Further, in FIGS. 2A and 2B, timings of starting to move the evaporationsource holders A, B, C and D may be after stopping or before stoppingpreceding ones of the evaporation source holders. Further, when asucceeding one of the evaporation source holder starts moving beforesolidifying a vapor-deposited film, in an EL layer having a laminatedlayers structure, a region mixed with evaporation materials (mixedregion) may be formed at an interface of respective films.

According to the invention of moving the substrate and the evaporationsource holders A, B, C and D relative to each other in this way,small-sized formation of the device can be achieved without needing toprolong a distance between the substrate and the evaporation sourceholder. Further, since the evaporation device is small-sized, adherenceof the sublimated evaporation material to the inner wall or theadherence preventive shield at inside of the deposition chamber isreduced and the evaporation material can be utilized without waste.Further, according to the evaporation method of the invention, it is notnecessary to rotate the substrate and therefore, the evaporation devicecapable of dealing with a large area substrate can be provided. Further,according to the invention of moving the evaporation source holder inthe X axis direction and the Y axis direction relative to the substrate,the vapor-deposited film can uniformly be formed.

Further, the invention can provide a fabricating device continuouslyarranged with a plurality of deposition chambers for carrying out anevaporation processing. The evaporation processing is carried out at theplurality of deposition chambers in this way and therefore, thethroughput of the light emitting device is promoted.

Further, the invention can provide a fabricating system enabling toinstall a vessel filled with an evaporation material directly to theevaporation device without being exposed to the atmosphere. According tothe invention, handling of the evaporation material is facilitated andan impurity can be avoided from being mixed to the evaporation material.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A, 1B and 1C are views showing an evaporation device according tothe invention;

FIGS. 2A and 213 are views showing an evaporation device according tothe invention;

FIGS. 3A and 3B are views showing a vessel according to the invention;

FIGS. 4A and 413 are views showing a vessel according to the invention;

FIGS. 5A and 5B are views showing an evaporation source holder accordingto the invention;

FIG. 6 is a view showing a fabricating device according to theinvention;

FIG. 7 is a view showing a carrier vessel according to the invention;

FIGS. 8A and 8B are views showing an evaporation device according to theinvention;

FIGS. 9A and 9B are views showing an evaporation device according to theinvention;

FIGS. 10A and 10B are views showing a light emitting device according tothe invention;

FIGS. 11A and 11B are views showing a light emitting device according tothe invention;

FIG. 12 is a view showing an evaporation device according to theinvention;

FIG. 13 is a view showing an evaporation device according to theinvention;

FIG. 14 is a view showing an evaporation device;

FIG. 15 is a view showing an evaporation device according to theinvention;

FIG. 16A through FIG. 16H are views showing examples of electronicdevice using the invention;

FIGS. 17A and 17B are views showing an evaporation device according tothe invention;

FIGS. 18A, 18B and 18C are views showing a light emitting deviceaccording to the invention; and

FIG. 19 is a view showing a light emitting device according to theinvention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

An explanation will be given of embodiments of the invention inreference to the drawings as follows. Further, in all of views forexplaining the embodiments, the same portions are attached with the samenotations and a repeated explanation thereof will be omitted.

Embodiment 1

FIGS. 1A, 1B and 1C show an evaporation device according to theinvention. FIG. 1A is a sectional view in X direction (a section takenalong a dotted line A-A′), FIG. 1B is a sectional view in Y direction (asection taken along a dotted line B-B′) and FIG. 1C is a top view.Further, FIGS. 1A, 1B and 1C show the evaporation device in the midst ofevaporation.

In FIGS. 1A, 1B and 1C, a deposition chamber 11 includes a substrateholder 12, an evaporation source holder 17 installed with an evaporationshutter 15, means for moving the evaporation source holder (notillustrated) and means for producing a low pressure atmosphere. Further,the deposition chamber 11 is installed with a substrate 13 and anevaporation mask 14. Further, alignment of the evaporation mask may beconfirmed by using a CCD camera (not illustrated). The evaporationsource holder 17 is installed with a vessel filled with an evaporationmaterial 18. The deposition chamber 11 is vacuumed to a vacuum degree of5×10⁻³ Torr (0.665 Pa) or lower, preferably, 10⁻⁴ through 10⁻⁵ Pa by themeans for producing the low pressure atmosphere.

Further, in evaporation, the evaporation material is previouslysublimated (vaporized) by resistance heating and scattered in adirection of the substrate 13 by opening the shutter 15 in evaporation.An evaporated evaporation material 19 is scattered in an upwarddirection and is selectively vapor-deposited on the substrate 13 bypassing an opening portion provided at the evaporation mask 14. Further,preferably, a deposition rate, a moving speed of the evaporation holderand opening and closing of the shutter are controlled by amicrocomputer. The evaporation rate of the evaporation source holder canbe controlled by the moving speed.

Further, although not illustrated, evaporation can be carried out whilemeasuring a film thickness of a deposited film by a quartz oscillatorprovided at the deposition chamber 11. When the film thickness of thedeposited film is measured by using the quartz oscillator, a change inmass of a film deposited to the quartz oscillator can be measured as achange in the resonance frequency.

In the evaporation device stem shown in FIGS. 1A-1C, in evaporation, adistance d of an interval between the substrate 13 and the evaporationsource holder 17 can be reduced to, representatively, 30 cm or smaller,preferably, 20 cm or smaller, further preferably, 5 cm through 15 cm tothereby significantly promote an efficiency of utilizing the evaporationmaterial and throughput.

In the evaporation device, the evaporation source holder 17 isconstituted by a vessel (representatively, crucible), a beater arrangedon an outer side of the vessel via a uniformly heating member, aninsulating layer provided on an outer side of the heater, an outercylinder containing these, a cooling pipe wound around an outer side ofthe outer cylinder and the evaporation shutter 15 for opening andclosing an opening portion of the outer cylinder including an openingportion of a crucible. Further, the evaporation source holder 17 may bea vessel capable of being carried in a state of fixing the heater to thevessel. Further, the vessel is formed by a material of a sintered bodyof BN, a composite sintered body of BN and AlN, quartz or a graphitecapable of withstanding high temperature, high pressure and lowpressure.

Further, the evaporation source holder 17 is provided with a mechanismmovable in X direction or Y direction at inside of the depositionchamber 11 while maintaining a horizontal state. In this case, theevaporation source holder 17 is made to move in zigzag on atwo-dimensional plane as shown by FIG. 2A or FIG. 2B. Further, a pitchof moving the evaporation source holder 17 may pertinently be matched toan interval between insulators. Further, insulators 10 are arranged in astripe shape to cover end portions of first electrodes 21.

Further, it is not necessarily needed that an organic compound providedat the evaporation source holder is one or one kind thereof but may be aplurality of kinds thereof. For example, other than one kind of amaterial provided as a light emitting organic compound at theevaporation source holder, other organic compound which can be a dopant(dopant material) may be provided along therewith. It is preferable todesign an organic compound layer to be vapor-deposited to constitute bya host material and a light emitting material (dopant material) havingexcitation energy lower than that of the host material such that theexcitation energy of the dopant becomes lower than excitation energy ofa hole transporting region and excitation energy of an electrontransporting layer. Thereby, diffusion of a molecular exciter of thedopant can be prevented and the dopant can effectively be made to emitlight. Further, when the dopant is a material of a carrier trap type, anefficiency of recombining carriers can also be promoted. Further, theinvention includes a case in which a material capable of convertingtriplet excitation energy to luminescence is added to a mixing region asa dopant. Further, in forming the mixing region, a concentrationgradient may be provided to the mixing region.

Further, when a plurality of organic compounds are provided at a singleevaporation source holder, it is preferable for evaporating directionsto be skew to intersect at a position of an object to be deposited suchthat the organic compounds are mixed together. Further, in order tocarry out common evaporation, the evaporation source holder may beprovided with four kinds of evaporation materials (for example, twokinds of host materials as evaporation material A, two kinds of dopantmaterials as evaporation material B). Further, when a pixel size issmall (or, an interval between respective insulators is narrow), a filmcan finely be formed by dividing inside of a vessel in four and carryingout common evaporation for subjecting respectives pertinently toevaporation.

Further, since the interval distance d between the substrate 13 and theevaporation source holder 17 is narrowed to, representatively, 30 cm orsmaller, preferably, 5 cm through 15 cm, there is a concern of heatingalso the evaporation mask 14. Therefore, it is preferable for theevaporation mask 14 to use a metal material having a low thermalexpansion rate which is difficult to deform by heat (for example, a highmelting point metal such as tungsten, tantalum, chromium, nickel ormolybdenum or an alloy including these elements, a material such asstainless steel, inconel, Hastelloy). For example, a low thermalexpansion alloy having 42% of nickel and 58% of iron or the like ispointed out. Further, in order to cool the evaporation mask to beheated, the evaporation mask may be provided with a mechanism ofcirculating a cooling medium (cooling water, cooling gas).

Further, in order to clean a deposited substance adhered to the mask, itis preferable to generate a plasma at inside of the deposition chamberby plasma generating means to vaporize the deposited substance adheredto the mask to vent the vapor to outside of the deposition chamber. Forthat purpose, a mask is separately provided with an electrode and a highfrequency power source 20 is connected to either one of them. By theabove-described, it is preferable that the mask is formed by aconductive material.

Further, the evaporation mask 14 is used when an evaporation film isselectively formed on a first electrode 21 (cathode or anode) and theevaporation mask 14 is not particularly needed when the evaporation filmis formed over an entire face thereof.

Further, the deposition chamber includes gas introducing means forintroducing one kind or a plurality of kinds of gases selected from thegroup consisting of Ar, H, F, NF₃, and O and venting means for ventingthe deposited substance vaporized. By the above-described constitution,inside of the deposition chamber can be cleaned without being in contactwith the atmosphere in maintenance.

Cleaning can be performed as follows, the atmosphere in a chamber issubstituted by nitrogen, and is vacuum exhausted, and a high frequencypower supply (13.56 MHz) can be connected with either the mask or theelectrode so that a plasma is generated therebetween (substrate shutter,not illustrated). And, argon and hydrogen are introduced to the chamberin respective flow rate of 30 sccm, and the atmosphere in the chamberare stabilized, an RF electric power of 800 W is applied to generateplasma, thereby the mask and inner wall of the chamber can be cleaned.

Further, the deposition chamber 11 is connected with a vacuuming chamberfor vacuuming inside of the deposition chamber. The vacuum processingchamber is provided with a turbo-molecular pump of a magnetic levitationtype, a cryopump or a dry pump. Thereby, the ultimate vacuum degree ofthe deposition chamber 11 can be made to be 10⁻⁵ through 10⁻⁶ Pa andinverse diffusion of an impurity from a pump side and an venting systemcan be controlled. In order to prevent an impurity from being introducedinto the deposition chamber 11, as a gas to be introduced, an inert gasof nitrogen or rare gas is used. There are used the gases to beintroduced which are highly purified by a gas refiner before beingintroduced into the device. Therefore, it is necessary to provide thegas refiner such that the gas is highly purified and thereafterintroduced into the deposition chamber 11. Thereby, an impurity ofoxygen, water or the like included in the gas can previously be removedand therefore, the impurities can be prevented from being introducedinto the deposition chamber 11.

Further, the substrate holder 12 is provided with a permanent magnet forfixing the evaporation mask comprising a metal with the magnetic forceand also fixing the substrate 13 interposed therebetween. Although anexample of bringing the evaporation mask into close contact with thesubstrate 13 is shown here, a substrate holder or an evaporation maskholder fixed with an interval to some degree therebetween maypertinently be provided.

According to the deposition chamber having the mechanism of moving theevaporation source holder as described above, it is not necessary toprolong the distance between the substrate and the evaporation sourceholder and the evaporation film can uniformly be formed.

Therefore, according to the invention, the distance, between thesubstrate and the evaporation source holder can be shortened andsmall-sized formation of the evaporation device can be achieved.Further, since the evaporation device becomes small-sized, adherence ofthe sublimated evaporation material to the inner wall or the adherencepreventive shield at inside of the deposition chamber can be reduced andthe evaporation material can effectively be utilized. Further, accordingto the evaporation method of the invention, it is not necessary torotate the substrate and therefore, the evaporation device capable ofdealing with a large area substrate can be provided.

Further, by shortening the distance between the substrate and theevaporation source holder in this way, the evaporation film can bedeposited thinly and controllably.

Embodiment 2

A detailed description will be given of constitutions of a vessel forfilling an is evaporation material and an evaporation source holder at asurrounding thereof according to the invention in reference to FIGS. 3Aand 3B as follows. Further, FIGS. 3A and 3B show a state of opening ashutter.

FIG. 3A shows a sectional view of a surrounding of one vessel installedat an evaporation source holder 304 illustrated with heating means 303provided at the evaporation source holder, a power source 307 of theheating means, an evaporation material 302 of the vessel, a filter 305provided at inside of the vessel and a shutter 306 arranged above anopening portion provided at an upper portion of the vessel. As theheating means 303, resistance heating, high frequency or laser may beused, specifically, an electric coil may be used.

Further, the evaporation material 302 heated by the heating means 303 issublimated and the sublimated material 302 rises upwardly from theopening portion of the vessel. At this occasion, the sublimated materialhaving a size equal to or larger than a certain constant amount (mesh offilter) cannot pass the filter 305 provided at inside of the vessel,returns into the vessel and is sublimated again. Further, the filter 305may be formed by a highly conductive material and heated by heatingmeans (not illustrated). By the heating, the evaporation material can beprevented from being solidified and adhered to the filter.

By the vessel having the constitution provided with such a filter, theevaporation material having an even size is vapor-deposited andtherefore, a deposition rate can be controlled and a uniform filmthickness can be provided and uniform evaporation without nonuniformitycan be carried out. Naturally, when uniform evaporation withoutnonuniformity can be carried out, it is not necessarily needed toprovide a filter. Further, a shape of the vessel is not limited to thatin FIG. 3A.

Next, an explanation will be given of a vessel filled with anevaporation material having a constitution different from that of FIG.3A in reference to FIG. 3B.

FIG. 3B is illustrated with a vessel 311 installed at an evaporationholder, an evaporation material 312 at inside of the vessel, firstheating means 313 provided at the evaporation source holder, a powersource 318 of the first heating means, a shutter 317 arranged above anopening portion of the vessel, a plate 316 provided above the openingportion, second heating means 314 provided to surround the filter and apower source 319 of second heating means.

Further, the evaporation material 312 heated by the first heating means313 is sublimated and the sublimated evaporation material rises upwardlyfrom the opening portion of the vessel 311. At this occasion, thesublimated material having a size equal to or larger than a certainconstant amount cannot pass an interval between the plate 316 providedabove the opening portion of the vessel and the second heating means314, impinges on the plate 316 and returns to inside of the vessel.Further, since the plate 316 is heated by the second heating means 314,the evaporation material can be prevented from solidifying and adheringto the plate 316. Further, it is preferable to form the plate 316 by ahighly conductive material. Further, a filter may be provided in placeof the plate.

Further, heating temperature (T₁) by the first heating means 313 ishigher than sublimating temperature (T_(A)) of the evaporation material,a heating temperature (T₂) by the second heating means 314 may be lowerthan that of the first heating means. This is because once sublimatedevaporation material is easy to sublimate and therefore, the evaporationmaterial is sublimated without applying the actual sublimatingtemperature. That is, respective heating temperatures may establishT₁>>T₂>T_(A).

By such a vessel having a constitution of providing the heating meansaround the plate, the evaporation material having an even size issublimated, further, the sublimated material passes a vicinity of thebeating means and therefore, adherence of the evaporation material tothe plate is reduced, further, the deposition rate can be controlled andtherefore a uniform film thickness can be provided and uniformevaporation without nonuniformity can be carried out. Naturally, whenthe uniform evaporation without nonuniformity can be carried out, it isnot necessarily needed to provide the plate. Further, the shape of thevessel is not limited to those in FIGS. 3A and 3B but, for example, thevessel may be provided with shapes as shown by FIGS. 4A and 4B.

FIG. 4A shows an example of providing heating means 402 at anevaporation source holder 404 illustrating sectional views of examplesof shapes of vessels 403 and 405 in each of which an opening portion ofthe vessel is narrowed toward an upper side thereof. Further, afterfilling a refined evaporation material in a vessel having a wide openingportion, the shapes of the vessel 403 or 405 shown in FIG. 4A may beconstituted by using a lid or the like. Further, when a diameter of theopening portion of the vessel narrowed toward the upper side isconstituted by the size of the evaporation material intended to form, aneffect similar to that of a filter can be achieved.

Further, FIG. 4B shows examples of providing heating means 412 atvessels. Although shapes of the vessels 413 and 415 are similar to thoseof FIG. 4A, the heating means 412 are provided at the vessels per se.Further, power sources of the heating means may be designed to bebrought into an ON state at a stage of being installed to evaporationsource holders. By such a constitution of providing the heating means atthe vessel per se, heat can be applied sufficiently to an evaporationmaterial even in the case of a vessel having an opening portion in ashape which is difficult to heat.

Next, a specific constitution of an evaporation source holder will beexplained in reference to FIGS. 5A and 5B. FIGS. 5A and 5B show enlargedviews of evaporation source holders.

FIG. 5A shows a constitution example of providing four vessels 501filled with an evaporation material to an evaporation source holder 502in a shape of a lattice and providing shutters 503 above the respectivevessels and FIG. 5B shows a constitution example of providing fourvessels 511 filled with an evaporation material to an evaporation sourceholder 512 in a linear shape and providing shutters 513 above therespective vessels.

A plurality of the vessels 501 or 511 filled with the same material maybe installed at the evaporation source holder 502 or 512 illustrated inFIG. 5A or 5B or a single one of the vessel may be installed at theevaporation source holder. Further, common evaporation may be carriedout by installing vessels filled with different evaporation materials(for example, host material and guest material). Further, as describedabove, the evaporation material is sublimated by heating the vessel anda film is formed at the substrate.

Further, as shown by FIG. 5A or 5B, it may be controlled whether thefilm is formed by the sublimated evaporation material by providing theshutter 503 or 513 above each vessel. Further, only a single one of theshutter may be provided above all of the vessels. Further, by theshutter, it can be reduced to sublimate and scatter an unnecessaryevaporation material without stopping to heat the evaporation sourceholder which does not form the film, that is, the evaporation sourceholder being at standby. Further, the constitution of the evaporationsource holder is not limited to those of FIGS. 5A and 5B but maypertinently be designed by a person for embodying the invention.

By the above-described evaporation source holder and vessel, theevaporation material can efficiently be sublimated, further, the film isformed in a state in which the size of the evaporation material is evenand therefore, a uniform evaporation film without nonuniformity isformed. Further, a plurality of evaporation materials can be installedat the evaporation source holder and therefore, common evaporation caneasily be carried out. Further, an aimed EL layer can be formed in oneoperation without moving the deposition chamber for each film of the ELlayer.

Embodiment 3

An explanation will be given, with reference to FIG. 6, of a device of afabricating method of filling a refined evaporation material in theabove-described vessel, carrying the vessel and thereafter installingthe vessel directly at an evaporation device which is a depositiondevice, to carry out evaporation.

FIG. 6 illustrates a maker, representatively, a material maker 618(representatively, material maker) for producing and refining an organiccompound material which is an evaporation material and a maker(representatively, production factory) 619 of a light emitting devicewhich is a maker of a light emitting device having an evaporationdevice.

First, an order 610 is carried out from the light emitting device maker619 to the material maker 618. Based on the order 610, the materialmaker 618 refines to sublimate an evaporation material and fills anevaporation material 612 in a shape of a powder refined in high purityto a first vessel (representatively, crucible) 611. Thereafter, thematerial maker 618 isolates the first vessel from the atmosphere suchthat an extra impurity is not adhered to inside or outside thereof, andcontains the first vessel 611 in second vessels 621 a and 621 b tohermetically seal for preventing the first vessel 611 from beingcontaminated at inside of the clean environment chamber. In hermeticallysealing the second vessels 621 a and 621 b, at inside of the vessels itis preferable to be vacuum or to be filled with an inert gas of nitrogenor the like. Further, it is preferable to clean the first vessel 611 andthe second vessels 621 a and 621 b before refining or containing theevaporation material 612 with an ultra high purity. Further, althoughthe second vessels 621 a and 621 b may be package films having barrierperformance for blocking oxygen or moisture from mixing thereinto, inorder to be able to take out the vessels automatically, it is preferablethat the second vessels are constituted by stout vessels having lightblocking performance in a shape of a cylinder or a shape of a box.

Thereafter, the first vessel 611 is carried (617) from the materialmaker 618 to the light emitting device maker 619 in a state of beinghermetically sealed by the second vessels 621 a and 621 b.

At the light emitting device maker 619, the first vessel 611 is directlyintroduced into a vacuumable processing chamber 613 in a state of beinghermetically sealed in the second vessels 621 a and 621 b. Further, theprocessing chamber 613 is an evaporation device installed with heatingmeans 614 and substrate holding means (not illustrated) at insidethereof.

Thereafter, inside of the processing chamber 613 is vacuumed to bringabout a clean state in which oxygen or moisture is reduced as less aspossible, thereafter, without breaking the vacuum, the first vessel 611is taken out from the second vessels 621 a and 621 b, the first vessel611 is installed in contact with the heating means 614 and anevaporation source can be prepared. Further, an object to be deposited(here, substrate) 615 is installed at the processing chamber 613 to beopposed to the first vessel 611.

Successively, an evaporation film 616 is formed on a surface of theobject to be deposited 615 by applying heat to the evaporation materialby the heating means 614. The evaporation film 616 provided in this waydoes not include an impurity and when a light emitting escent element isfinished by using the evaporation film 616, high reliability and highbrightness can be realized.

Further, after forming the film, the evaporation material remaining atthe first vessel 611 may be sublimated to refine at the light emittingdevice maker 619. After forming the film, the first vessel 611 isinstalled at the second vessels 621 a and 621 b, taken out from theprocessing chamber 613 and carried to a refining chamber for sublimatingto refine the evaporation material. There, the remaining evaporationmaterial is sublimated to refine and the evaporation material in a shapeof a powder refined at high purity is filled into a separate vessel.Thereafter, in a state of being hermetically sealed in the secondvessel, the evaporation material is carried to the processing chamber613 to carry out evaporation processing. At this occasion, it ispreferable that a relationship among temperature (T3) for refining theremaining evaporation material, temperature (T4) elevated at asurrounding of the evaporation material and temperature (T5) at asurrounding of the evaporation material which is sublimated to refinesatisfy T3>T4>T5. That is, in the case of sublimating to refine thematerial, when temperature is lowered toward a side of the vessel forfilling the evaporation material to be sublimated to refine, convectionis brought about and the deposition material can be sublimated to refineefficiently. Further, the refining chamber for sublimating to refine theevaporation material may be provided in contact with the processingchamber 613 and the evaporation material which has been sublimated torefine may be carried without using the second vessel for hermeticallysealing the evaporation material.

As described above, the first vessel 611 is installed in the evaporationchamber which is the processing chamber 613 without being brought intocontact with the atmosphere at all to enable to carry out evaporationwhile maintaining the purity at the stage of containing the evaporationmaterial 612 by the material maker. Therefore, according to theinvention, a fully automated fabricating system promoting the throughputcan be realized and an integrated closed system capable of avoiding theimpurity from mixing to the evaporation material 612 refined at thematerial maker 618 can be realized. Further, the evaporation material612 is directly contained in the first vessel 611 by the material materbased on the order and therefore, only a necessary amount thereof isprovided to the light emitting device maker and the comparativelyexpensive evaporation material can efficiently be used. Further, thefirst vessel and the second vessel can be reutilized to amount to areduction in cost.

A specific explanation will be given of a mode of the vessel to becarried in reference to FIG. 7 as follows. A second vessel divided intoan upper portion (621 a) and a lower portion (621 b) used fortransportation includes fixing means 706 provided at an upper portion ofthe second vessel for fixing a first vessel, a spring 705 for pressingthe fixing means, a gas introducing port 708 provided at a lower portionof the second vessel for constituting a gas path for maintaining thesecond vessel being depressurized, an O ring 707 for fixing the uppervessel 621 a and the lower vessel 621 b and a retaining piece 702. Thefirst vessel 611 filled with the refined evaporation material isinstalled in the second vessel. Further, the second vessel may be formedby a material including stainless steel and the first vessel may beformed by a material including titanium.

At the material maker, the refined evaporation material is filled in thefirst vessel 611. Further, the upper portion 621 a and the lower portion621 b of the second vessel are matched via the O ring 707, the uppervessel 621 a and the lower vessel 621 b are fixed by the retaining piece702, and the first vessel 611 is hermetically sealed at inside of thesecond vessel. Thereafter, inside of the second vessel is depressurizedvia the gas introducing port 708 and is replaced by a nitrogenatmosphere and the first vessel 611 is fixed by the fixing means 706 byadjusting the spring 705. A desiccant may be installed at inside of thesecond vessel. When inside of the second vessel is maintained in vacuum,in a low pressure or in nitrogen atmosphere in this way, even a smallamount of oxygen or water can be prevented from adhering to theevaporation material.

The first vessel 611 is carried to the light emitting device maker 619under the state and is directly installed to the processing chamber 613.Thereafter, the evaporation material is sublimated by heating and theevaporation film 616 is formed.

Next, an explanation will be given of a mechanism of installing thefirst vessel 611 which is carried by being hermetically sealed in thesecond vessel to a deposition chamber 806 in reference to FIGS. 8A and8B and FIGS. 9A and 9B. Further, FIGS. 8A and 8B and FIGS. 9A and 9Bshow the first vessel in the midst of transportation.

FIG. 8A illustrates to a top view of an installing chamber 805 includinga base 804 for mounting the first vessel or the second vessel, anevaporation source holder 803, means 807 for mounting the base 804 andthe evaporation source holder 803 to move and carrying means 802 forcarrying the first vessel, and FIG. 8B illustrates a perspective view ofthe installing chamber. Further, the installing chamber 805 is arrangedto be contiguous to the deposition chamber 806 and the atmosphere of theinstalling chamber can be controlled by means for controlling theatmosphere via a gas introducing port. Further, the carrying means ofthe invention is not limited to a constitution of pinching a side faceof the first vessel to carry as illustrated in FIGS. 8A and 8B but maybe constructed by a constitution of pinching (picking) the first vesselat upper part thereof to carry.

The second vessel is arranged to such an installing chamber 805 abovethe base 804 in a state of disengaging the retaining piece 702.Successively, inside of the installing chamber 805 is brought into adecompressed state by means for controlling the atmosphere. Whenpressure at inside of the installing chamber and pressure at inside ofthe second vessel become equal to each other, there is brought about astate of being capable of opening the second vessel easily. Further, theupper portion 621 a of the second vessel is removed and the first vessel611 is installed in the evaporation source holder 803 by the carryingmeans 802. Further, although not illustrated, a portion for installingthe removed upper portion 621 a is pertinently provided. Further, themoving means 807 is moved (slid) and the evaporation source holder 803is moved from the installing chamber 805 to the deposition chamber 806.

Thereafter, by heating means provided at the evaporation source holder803, the evaporation material is sublimated and the film starts to beformed. In forming the film, when a shutter (not illustrated) providedat the evaporation source holder 803 is opened, the sublimatedevaporation material is scattered to the direction of the substrate andthe vapor-deposited onto the substrate to form the light emitting layer(including hole transporting layer, hole injecting layer, electrontransporting layer and electron injecting layer).

Further, after finishing evaporation, the evaporation source holder 803returns to the installing chamber 805 and the first vessel 611 installedat the evaporation source holder 803 by the carrying means 802 istransferred to the lower vessel (not illustrated) of the second vesselinstalled at the base 804 and is hermetically sealed by the upper vessel621 a. At this occasion, it is preferable that the first vessel, theupper vessel 621 a and the lower vessel are hermetically sealed by acombination by which the vessels have been carried. Under the state, theinstalling chamber 805 is brought under the atmospheric pressure and thesecond vessel is taken out from the installing chamber, fixed with theretaining piece 702 and is carried to the material maker 618.

Further, in order to carry the evaporation source holder for startingevaporation and the evaporation source holder finished with evaporationefficiently, the moving means 807 may be provided with a rotatingfunction. Further, the carrying means 802 may include arms of a numberof the first vessels installed at the evaporation source holder and aplurality of the carrying means 802 may be provided.

Further, in place of the moving means 807, a rotating base (rotatingbase 820) can be arranged between the base 804 and the evaporationsource holder 803 to efficiently enable to install the first vesselbefore starting the evaporation to the evaporation source holder andinstall the first vessel finished with evaporation to the second vessel.

Explaining a method of efficiently carrying out the operation inreference to FIG. 17A, when a preceding one of the evaporation sourceholder 803 is subjected to evaporation, as described above, a succeedingone of the first vessel is installed at the base 804 and successively,installed to one side of the rotating base 820 by carrying means.Further, the rotating base 820 is rotated by 180 degrees. Thereafter,the first vessel of the evaporation source holder 803 finished withevaporation is removed from the evaporation source holder 803 andinstalled to other side of the rotating base 820 by the carrying means802. Further, the rotating base 820 is rotated by 180 degrees. Further,a succeeding one of the first vessel to be installed to the one side ofthe rotating base 820 is installed to the evaporation source holder 803by the carrying means and the evaporation source holder is moved to thedeposition chamber. Thereafter, the first vessel installed on the otherside of the rotating base 820 is installed to the base 804 by thecarrying means 802, hermetically sealed by the second vessel and takenout from the installing chamber 805. By such a constitution,installation of the first vessel before starting evaporation to theevaporation holder and installation of the first vessel after finishedwith the evaporation can efficiently be carried out.

Further, the carrying means 802 may include a mechanism of pinching theside face of the first vessel or a function including a mechanism ofpinching an upper face thereof, that is, a lid. Further, the rotatingbase may be provided with heating means for previously heating thematerial at inside of the evaporation source holder. Further,maintenance for interchanging a quartz oscillator installed at theevaporation source holder or the like may be carried out at theinstalling chamber.

A perspective view of FIG. 17B explains a case in which the first vesselbefore evaporation and the first vessel after evaporation areinterchanged by a method different from that of FIG. 17A.

The installing chamber 805 shown in FIG. 17B is characterized inincluding first carrying means 825 for opening the lid of the secondvessel and second carrying means 826 for taking out the first vesselfrom the second vessel and installing the first vessel to theevaporation source holder. The first and the second carrying meansrespectively include pinchers 823.

First, the lid of the second vessel fixed to the rotating base is openedand the rotating base 820 is rotated by a half by a rotating shaft 821.Further, by using the second carrying means, the first vessel is takenout from the second vessel the lid of which is opened, and carried tothe evaporation source holder installed at the deposition chamber 806 byopening an opening/closing window 824 to be installed. When theopening/closing window is opened, the installing chamber and thedeposition chamber are brought into a state of being maintained at adecompressed state to the same degree to prevent contamination of thedeposition chamber by an impurity. Further, after closing theopening/closing window, the evaporation source holder 803 is moved andthe evaporation to a substrate 822 installed at the deposition chamberis started.

During a time period in which evaporation is being carried out in thedeposition chamber 806, the installing chamber is opened to theatmospheric pressure, the second vessel filled with new one of theevaporation material is installed at the rotating base 820 and theinstalling chamber is brought into the decompressed state again. At thisoccasion, a vacant portion of the rotating base may be disposed on thisside by the rotating shaft.

Thereafter, the first vessel finished with evaporation is returned tothe second vessel of the rotating base by using the second carryingmeans 826 and the lid pinched by the first carrying means 825 is dosed.Successively, by the rust carrying means, the lid of a new one of thesecond vessel is opened, the first vessel is taken out by the secondcarrying means 826 and installed at the evaporation source holder.Further, during a time period in which evaporation is being carried outat the deposition chamber, the installing chamber is brought into theatmospheric pressure, the first and the second vessels which have beenused are taken out and new ones of the first and the second vessels areinstalled.

As described above, the first and the second vessels can be interchangedis without exposing the first vessel filled with the material to theatmosphere and efficiently.

Next, an explanation will be given of a mechanism of installing aplurality of first vessels carried by being hermetically sealed by thesecond vessels to a plurality of the evaporation source holders, whichis different from those of FIGS. 8A and 8B and FIGS. 17A and 17B inreference to FIGS. 9A and 9B.

FIG. 9A illustrates a top view of an installing chamber 905 including abase 904 for mounting the first vessel or the second vessel, a pluralityof evaporation source holders 903, a plurality of carrying means 902 forcarrying the first vessels and a rotating base 907 and FIG. 9Billustrates a perspective view of the installing chamber 905. Further,the installing chamber 905 is arranged to be contiguous to a depositionchamber 906 and the atmosphere of the installing chamber can becontrolled by means for controlling the atmosphere via a gas introducingport.

By the rotating base 907 and the plurality of carrying means 902,operation of installing the plurality of first vessels 611 to theplurality of evaporation source holders 905 and transferring theplurality of first vessels 611 from the plurality of evaporation sourceholders finished with film formation to the base 904 can efficiently becarried out. At this occasion, it is preferable to install the firstvessel 611 to the second vessel which has been carried.

According to an evaporation film formed by the above-describedevaporation device, an impurity can be reduced to an extreme and when alight emitting element is finished by using the evaporation film, highreliability and brightness can be realized. Further, by such afabricating system, the vessel filled by the material maker can beinstalled directly to the evaporation device and therefore, oxygen orwater can be prevented from adhering to the evaporation material andfurther ultrahigh purity formation of the light emitting element in thefuture can be dealt with. Further, by refining the vessel having theremaining evaporation material again, waste of the material can beeliminated. Further, the first vessel and the second vessel can bereutilized and the low cost formation can be realized.

EXAMPLES

Examples of the present invention is described thereinafter based on thedrawings. In addition, in all drawings used for the description of theexamples, same portions are given common symbols, and the repetitivedescriptions thereof are omitted.

Example 1

In this example, an example of forming TFT on a substrate having aninsulating surface and forming an EL element (light emitting element) isshown in FIG. 10. A cross-sectional view of one TFT that is connected toan EL element in a pixel portion is shown in this example.

As shown in FIG. 10A, a base insulating film 201 is formed by alamination of insulating films such as a silicon oxide film, a siliconnitride film or a silicon oxide nitride film on a substrate 200 havingan insulating surface. Although the base insulating film 201 herein usesa two-layer structure, it may use a structure having a single layer ortwo layers or more of the insulating films. The first layer of the baseinsulating film is a silicon oxide nitride film formed to have athickness of 10 to 200 nm (preferably 50 to 100 nm) by a plasma CVDusing a reaction gas of SiH₄, NH₃ and N₂O. Herein, a silicon oxidenitride film is formed (composition ratio: Si=32%, O=27%, N=24% andH=17%) having a film thickness of 50 nm. The second layer of the baseinsulating film is a silicon oxide nitride film formed to have athickness 50 to 200 nm (preferably 100 to 150 nm) by a plasma CVD usinga reaction gas of SiH₄ and N₂O. Herein, a silicon oxide nitride film isformed (composition ratio: Si=32%, O=59%, N=7% and H=2%) having a filmthickness of 100 nm.

Subsequently, a semiconductor layer is formed on the base insulatingfilm 201. The semiconductor layer is formed as follows: an amorphoussemiconductor film is formed by known means (a sputtering, an LPCVD, aplasma CVD, or the like), then, the film is crystallized by a knowncrystallization method (a laser crystallization method, a thermalcrystallization method or a thermal crystallization method using acatalyst such as nickel), and then, the crystalline semiconductor filmis patterned into a desired form. This semiconductor layer is formed ina thickness of 25 to 80 nm (preferably 30 to 60 nm). The material of thecrystalline semiconductor film, although not limited in material, ispreferably formed of silicon or a silicon-germanium alloy.

In the case of forming a crystalline semiconductor film by a lasercrystallizing process, it is possible to use an excimer laser of apulse-oscillation or continuous-oscillation type, a YAG laser, or anYVO₄ laser. In the case of using such laser, preferably used is a methodthat the laser light emitted from a laser oscillator is condensed by anoptical system into a linear form to be irradiated onto thesemiconductor film. The condition of crystallization is to beappropriately selected by those who implement the invention. In the caseof using an excimer laser, pulse oscillation frequency is 30 Hz andlaser energy density is 100 to 400 mJ/cm² (typically 200 to 300 mJ/cm²).Meanwhile, in the case of using a YAG laser, preferably its secondharmonic is used and pulse oscillation frequency is 1 to 10 kHz andlaser energy density is 300 to 600 mJ/cm² (typically 350 to 500 ml/cm²).The laser light focused linear to a width of 100 to 1000 μm, e.g. 400μm, is irradiated throughout the substrate entirety, whereupon theoverlap ratio of linear laser beam may be taken 50 to 98%.

Then, the surface of the semiconductor layer is cleaned by an etchantcontaining a hydrogen fluoride, to form a gate insulating film 202covering the semiconductor layer. The gate insulating film 202 is formedby an insulating film containing silicon having a thickness of 40 to 150nm by the use of a plasma CVD or sputtering. In this example, a siliconoxide nitride film is formed (composition ratio: Si=32%, O=59%, N=7% andH=2%) to have a thickness of 115 nm by a plasma CVD. Of course, the gateinsulating film 202 is not limited to a silicon oxide nitride film butmay be made in a single layer or a lamination of layers of insulatingfilms containing other form of silicon.

After cleaning the surface of the gate insulating film 202, a gateelectrode 210 is formed.

Then, a p-type providing impurity element (such as B), herein, adequateamounts of boron is added to the semiconductor to form a source region211 and a drain region 212. After the addition of the impurity element,heating process, intense light radiation or laser irradiation is made inorder to activate the impurity element. Simultaneously with activation,restoration is possible from the plasma damage to the gate insulatingfilm or from the plasma damage at the interface between the gateinsulating film and the semiconductor layer. Particularly, it isextremely effective to irradiate the second harmonic of a YAG laser at amain or back surface thereby activating the impurity element in anatmosphere at room temperature to 300° C. YAG laser is preferableactivating means since it requires a few maintenances.

In the subsequent process, after hydrogenation is carried out, aninsulator 213 a made from an organic or inorganic material (for example,from a photosensitive organic resin) is formed, then, an aluminumnitride film, an aluminum oxynitride film shown as AlN_(x)O_(y), or afirst protection film 213 b made from a silicon nitride film are formed.The film shown as AlN_(x)O_(y) is formed by introducing oxygen,nitrogen, or rear gas from the gas inlet system by RF sputtering using atarget made of AlN or Al. The content of nitrogen in the AlN_(x)O_(y)film may be in the range of at least several atom %, or 2.5 to 47.5 atom%, and the content of oxygen may be in the range of at most 47.5 atom %,preferably, less than 0.01 to 20 atom %. A contact hole is formedtherein reaching the source region 211 or drain region 212. Next, asource electrode (wiring) 215 and a drain electrode 214 are formed tocomplete a TFT (p-channel TFT). This TFT will control the current thatis supplied to LED (Light Emitting Device).

Also, the present invention is not limited to the TFT structure of thisexample, but, if required, may be in a lightly doped drain (LDD)structure haling an LDD region between the channel region and the drainregion (or source region). This structure is formed with a region animpurity element is added with light concentration between the channelformation region and the source or drain region formed by adding animpurity element with high concentration, which is called an LDD region.Furthermore, it may be in, what is called, a GOLD (Gate-drain OverlappedLDD) structure arranging an LDD region overlapped with a gate electrodethrough a gate insulating film. It is preferable that the gate electrodeis formed in a lamination structure and etched to have a different taperangle of an upper gate electrode and a lower gate electrode to form anLDD region and a GOLD region in a self-aligning manner using the gateelectrode as a mask.

Meanwhile, although explanation herein was by using the p-channel TFT,It is needless to say that an n-channel TFT can be formed by using ann-type impurity element (P, As, etc.) in place of the p-type impurityelement.

Subsequently, in the pixel portion, a first electrode 217 in contactwith a connecting electrode in contact with the drain region is arrangedin matrix shape. This first electrode 217 serves as an anode or acathode of the light-emitting element. Then, a insulator (generallyreferred to as a bank, a partition, a barrier, a mound, or the like) 216that covers the end portion of the first electrode 217 is formed. Forthe insulator 216, a photosensitive organic resin is used. In the caseof using a negative type photosensitive acrylic resin is used as amaterial of the insulator 216, for example, the insulator 216 may bepreferably prepared such that the upper end portion of the insulator 216has a curved surface having a first curvature radius and the lower endportion of the insulator has a curved surface having a second curvatureradius. Each of the first and second curvature radiuses may bepreferably in the range of 0.2 μm to 3 μm. Furthermore, a layer 218containing an organic compound is formed in the pixel portion, and asecond electrode 219 is then formed thereon to complete an EL element.This second electrode 219 serves as a cathode or an anode of the ELelement.

The insulator 216 that covers the end portion of the first electrode 217may be covered with a second protective film formed of an aluminumnitride film, an aluminum nitride oxide film, or a silicon nitride film.

For instance, an example of using a positive type photosensitive acrylicresin as a material of the insulator 216 is shown in FIG. 10B. Theinsulator 316 a has a curved surface having a curvature radius only theupper end thereof. Furthermore, the insulator 316 a is covered with asecond protective film 316 b formed of an aluminum nitride film, analuminum nitride oxide film, or a silicon nitride film.

For instance, when the first electrode 217 is used as an anode, thematerial of the first electrode 217 may be a metal (i.e., Pt, Cr, W, Ni,Zn, Sn, or In) having a large work function. The end portion of such anelectrode 217 is covered with the insulator (generally referred to as abank, a partition, a barrier, a mound, or the like) 216 or 316, then, avacuum-evaporation is carried out moving an evaporation source alongwith the insulator 216, 316 a, or 316 b by using the evaporation deviceshown in Embodiment 1 or 2. For example, a deposition chamber isvacuum-exhausted until the degree of vacuum reaches 5×10⁻³ Torr (0.665Pa) or less, preferably 10⁻⁴ to 10⁻⁶ Pa, for vacuum-evaporation. Priorto vacuum-evaporation, the organic compound is vaporized by resistanceheating. The vaporized organic compound is scattered on the substrate asthe shutter is opened for vacuum-evaporation. The vaporized organiccompound is scattered upward, then, deposited on the substrate throughan opening formed in a metal mask. A light emitting layer (including ahole transporting layer, a hole injection layer, an electrontransporting layer, and an electron injection layer) is formed.

In, the case that a layer containing an organic compound is formed thatemits white luminescence in its entirety by vacuum-evaporation, it canbe formed by depositing each light emitting layer. For instance, an Alq₃film, an Alq₃ film partially doped with Nile red which is a red lightemitting pigment, a p-EtTAZ film, and a TPD (aromatic diamine) film arelayered in this order to obtain white light.

In case of using vacuum-evaporation, as shown in Embodiment 3, a meltingpot in which an EL material that a vacuum-evaporation material is storedin advance by a material maker is set in a deposition chamber.Preferably, the melting pot is set in the deposition chamber whileavoiding contact with the air. A melting pot shipped from a materialmaker is preferably sealed in a second container during shipment and isintroduced into a deposition chamber in that state. Desirably, a chamberhaving vacuum exhaust means is connected to the deposition chamber, themelting pot is taken out of the second container in vacuum or in aninert gas atmosphere in this chamber, and then the melting pot is set inthe deposition chamber. In this way, the melting pot and the EL materialstored in the melting pot are protected from contamination.

The second electrode 219 comprises a laminate structure of a metal(e.g., Li, Mg, or Cs) having a small work function; and a transparentconductive film (made of an indium tin oxide (ITO) alloy, an indium zincoxide alloy (In₂O₃—ZnO), zinc oxide (ZnO), or the like) on the thinfilm. For attaining a low-resistance cathode, an auxiliary electrode maybe provided on the insulator 216 or 316. The light-emitting element thusobtained emits white luminescence. Here, the example in which the layer218 containing the organic compound is formed by vacuum-evaporation hasbeen described. According to the present invention, however, it is notlimited to a specific method and the layer 218 may be formed using acoating method (a spin coating method, an ink jet method).

In this example, an example of depositing layers made from low molecularmaterial as an organic compound layer is described though, both highmolecular materials and low molecular materials may also be deposited.

It can be thought that there are two types of structures of an activematrix light emitting device having TFT in terms of radiating directionof luminescence. One is a structure that luminescence generated in alight emitting element can be observed passing through the secondelectrode, and can be manufactured using the above-mentioned steps.

Another structure is that luminescence generated in the light emittingelement is irradiated into the eyes of the observer after passingthrough the first electrode, it is preferable that the first electrode217 may be prepared using a material having a translucency. Forinstance, when the first electrode 217 is provided as an anode, atransparent conductive film (made of an indium tin oxide (ITO) alloy, anindium zinc oxide alloy (In₂O₃—ZnO), zinc oxide (ZnO), or the like) isused for a material of the first electrode 217 and the end portionthereof is covered with the insulator (generally referred to as a bank,a partition, a barrier, a mound, or the like) 216, followed by formingthe layer 218 containing an organic compound. On this layer,furthermore, a second electrode 219 formed of a metal film (i.e., analloy of MgAg, MgIn, AlLi, CaF₂, CaN, or the like, or a film formed by aco-vacuum-evaporation of an element of Group I and Group II in theperiodic table and aluminum) is formed as a cathode. Here, a resistiveheating method using vacuum-evaporation is used for the formation of acathode, so that the cathode can be selectively formed using avacuum-evaporation mask.

After forming the second electrode 219 by the steps described above, aseal substrate is laminated using a sealing material to encapsulate thelight-emitting element formed on the substrate 200.

Though a top gate TFT is described as an example in this example, thepresent invention can be applied irrespective of TFT's structure. Forexample, the present invention can be applied to a bottom gate (reversestagger) TFT and a forward stagger TFT.

For instance, as shown in FIG. 19, a bottom gate structure is composedof a base insulating film 51, a gate electrode 52, a gate insulatingfilm 53, a semiconductor film 54 having an impurity region and a channelformation region, an interlayer insulating film 55, which are formed ona substrate 50. A contact hole is formed in the position thatcorresponds to an impurity region in a semiconductor film. Asource/drain wiring 56 is formed in the contact hole. Hereinafter, assame as FIG. 10, a first electrode 57 that covers the end portion of asource/drain wiring, an insulating film 58 that covers the end portionof the first electrode, a protective film 59 that covers the insulatingfilm 58, a layer containing an organic compounds, and a second electrode61 are formed. In FIG. 19, since an inorganic material is used for theinterlayer insulating film 55 and an organic material is used for theinsulating film 58, the protective film 59 having nitride such assilicon nitride is provided as a protective film for covering theinsulating film 58.

In the case that such bottom gate type is adopted to the TFT having anamorphous semiconductor film, since crystallization is not necessary tobe conducted, a material of aluminum or the like that has low heatresistance can be used for a gate electrode.

Further, an appearance view of an active matrix type light-emittingdevice is described with reference to FIG. 11. Further, FIG. 11A is atop view showing the light emitting apparatus and FIG. 11B is asectional view constituted by cutting FIG. 11A by a line A-A′. A sourcesignal side driving circuit 1101, a pixel portion 1102, and a gatesignal line driving circuit 1103 are formed on a substrate 1110. Aninner side surrounded by a seal substrate 1104, the sealing material1105, and the substrate 1110 constitutes a space 1107.

Further, a wiring 1108 for transmitting signals inputted to the sourcesignal side driving circuit 1101 and the gate signal side drivingcircuit 1103 receives a video signal to or a clock signal from FPC(flexible printed circuit) 1109 for constituting an external inputterminal. Although only FPC is illustrated here, the FPC may be attachedwith a printed wiring substrate (PWB). The light emitting apparatus inthe specification includes not only a main body of the light emittingapparatus but also a state in which FPC or PWB is attached thereto.

Next, a sectional structure will be explained in reference to FIG. 11B.Driver circuits and the pixel portion are formed over a substrate 1110and here, the source signal line driving circuit 1101 as the drivercircuit and the pixel portion 1102 are shown.

Further, the source signal line driving circuit 1101 is formed with aCMOS circuit combined with an n-channel type TFT 1123 and a p-channeltype TFT 1124. Further, TFT for forming the driver circuit may be formedby a publicly-known CMOS circuit, PMOS circuit or NMOS circuit. Further,although according to this example, a driver integrated type formed withthe driver circuits over the substrate is shown, the driver integratedtype is not necessarily be needed and the driver circuits can be formednot over the substrate but at outside thereof.

Further, the pixel portion 1102 is formed of a plurality of pixels eachincluding a switching TFT 1111, a current controlling TFT 1112, and afirst electrode (anode) 1113 electrically connected to a drain of thecurrent controlling TFT 1112.

Further, an insulating layer 1114 is formed at both ends of the firstelectrode (anode) 1113 and an organic compound layer 1115 is formed onthe first electrode (anode) 1113. The organic compound layer 1115 isformed by moving an evaporation source along with the insulating film1114 by using the device shown in Embodiments 1 and 2. Further, a secondelectrode (cathode) 1116 is formed over the organic compound layer 1115.As a result, a light-emitting element 1118 comprising the firstelectrode (anode) 1112, the organic compound layer 1115 and the secondelectrode (cathode) 1116 is formed. Here, the light-emitting element1118 shows an example of white color luminescence and therefore,provided with the color filter comprising a coloring layer 1131 and alight-shielding layer 1132 (for simplification, overcoat layer is notillustrated here). As shown an example that a coloring layer or colorfilter is formed in the white color luminescence element in FIG. 18, acolor filter can be formed instead of a coloring layer and both acoloring layer and a color filter can be formed.

In FIG. 18, a color filter is formed at the side of a seal substrate1104 since it is the structure that light emitted from a light emittingelement is observed through the second electrode, however, in case ofthe structure that light emitted from a light emitting element isobserved through the first electrode, a color filter is formed at theside of the substrate 1110.

The second electrode (cathode) 1116 functions also as a wiring common toall the pixels and electrically connected to FPC 1109 via the connectionwiring 1108. The third electrode (auxiliary electrode) 1117 is formed onthe insulating layer 1114 to realize to make the second electrode have alow resistance.

Further, in order to encapsulate the light-emitting element 1118 formedover the substrate 1110, the seal substrate 1104 is pasted by thesealing material 1105. Further, a spacer comprising a resin film may beprovided for ensuring an interval between the seal substrate 1104 andthe light-emitting element 1118. Further, the space 1107 on the innerside of the sealing material 1105 is filled with an inert gas ofnitrogen or the like. Further, it is preferable to use epoxy speciesresin for the sealing material 1105. Further, it is preferable that thesealing material 1105 is a material for permeating moisture or oxygen asless as possible. Further, the inner portion of the space 1107 may beincluded with the substance having an effect of absorbing oxygen ormoisture.

Further, according to the example, as a material for constituting theseal substrate 1104, other than glass substrate or quartz substrate, aplastic substrate comprising FRP (Fiberglass-Reinforced Plastics), PVF(polyvinyl fluoride), Mylar, polyester or acrylic resin can be used.Further, it is possible to adhere the seal substrate 1104 by using thesealing material 1105 and thereafter seal to cover a side face (exposedface) by a sealing material.

By encapsulating the light-emitting element as described above, thelight-emitting element can completely be blocked from outside and asubstance for expediting to deteriorate the organic compound layer suchas moisture or oxygen can be prevented from invading from outside.Therefore, the highly reliable light-emitting device can be provided.

Further, this example can be freely combined with Embodiments 1 to 3.

Example 2

According to the example, FIG. 12 shows an example of a fabricatingdevice of a multichamber system fully automating fabrication of from afirst electrode to sealing.

FIG. 12 shows a multichamber fabricating device having gates 100 athrough 100 x, a preparing chamber 101, a take-out chamber 119, carryingchambers 102, 104 a, 108, 114 and 118, delivery chambers 105, 107 and111, deposition chambers 106R, 106B, 106G, 106H, 106E, 109, 110, 112 and113, installing chambers for installing evaporation sources 126R, 126G,126B, 126E and 126H, a pretreatment chamber 103, a sealed substrateloading chamber 117, a sealing chamber 116, cassette chambers 111 a and111 b, a tray mounting stage 121, a cleaning chamber 122, a bakingchamber 123 and a mask stock chamber 124.

A procedure of carrying a substrate previously provided with a thin filmtransistor, an anode and an insulator for covering an end portion of theanode to the fabricating device shown in FIG. 12 and fabricating a lightemitting device will be shown as follows.

First, the substrate is set to the cassette chamber 120 a or thecassette chamber 120 b. When the substrate is a large-sized substrate(for example, 300 mm×360 mm), the substrate is set to the cassettechamber 120 a or 120 b and when the substrate is a normal substrate (forexample, 127 mm×127 mm), the substrate is carried to the tray mountingstage 121 and a plurality of the substrate are set to a tray (forexample, 300 mm×360 mm).

Successively, the substrate provided with pluralities of thin filmtransistors, anodes and insulators for covering the end portions of theanodes is carried to the carrying chamber 118 and carried to thecleaning chamber 122 to remove an impurity (small particle or the like)on the surface of the substrate by a solution. When the substrate iscleaned at the cleaning chamber 122, a face of the substrate to beformed with a film is set to direct downwardly under the atmosphericpressure. Successively, the substrate is carried to the baking chamber123 to vaporize the solution by heating.

Successively, the substrate is carried to the deposition chamber 112 andan organic compound layer operating as a hole injecting layer is formedon an entire face of the substrate previously provided with thepluralities of thin film transistors, anodes and insulators for coveringend portions of anodes. According to the example, a film of copperphthalocyaninne (CuPc) is formed by 20 nm. Further, when PEDOT is formedas a hole injecting layer, PEDOT may be formed by a spin coating methodby providing a spin coater at the deposition chamber 112. Further, whenan organic compound layer is formed by the spin coating method at thedeposition chamber 112, a face of the substrate to be deposited withfilm is set to direct upwardly under the atmospheric pressure. At thisoccasion, when the film is formed by using water or an organic solventas a solvent, the substrate is carried to the baking chamber 123 forsintering and moisture is vaporized by carrying out a heating treatmentin vacuum.

Successively, the substrate is carried from the carrying chamber 118provided with a substrate carrying mechanism to the preparing chamber101. According to the fabricating device of the embodiment, thepreparing chamber 101 is provided with a substrate reversing mechanismand the substrate can pertinently be reversed. The preparing chamber 101is connected to a vacuuming chamber and it is preferable to bring thepreparing chamber 101 under the atmospheric pressure by introducing aninert gas after vacuuming.

Successively, the substrate is carried to the carrying chamber 102connected to the preparing chamber 101. It is preferable to maintainvacuum by previously vacuuming such that moisture or oxygen is presentas less as possible at inside of the carrying chamber 102.

Further, the vacuuming chamber is provided with a turbo-molecular pumpof a magnetic levitation type, a cryopump or a dry pump. Thereby, anultimate vacuum degree of the carrying chamber connected to thepreparing chamber can be made to fall in a range of 10⁻⁵ through 10⁻⁶ Paand inverse diffusion of an impurity from a pump side and an exhaustsystem can be controlled. In order to prevent an impurity fromintroducing to inside of the device, as a gas to be introduced, an inertgas of nitrogen, a rare gas or the like is used. There is used the gasesintroduced into the device which are highly purified by a gas refinerbefore being introduced into the device. Therefore, it is necessary toprovide the gas refiner such that the gas is introduced into theevaporation device after having been purified highly. Thereby, animpurity of oxygen, water or the like included in the gas, canpreviously be removed and therefore, the impurity can be prevented frombeing introduced into the device.

Further, when a film including an organic compound formed at a uselessportion is intended to remove, the substrate may be carried to thepretreatment chamber 103 to selectively remove a laminated layer of theorganic compound film by using a metal mask. The pretreatment chamber103 includes plasma generating means and dry etching is carried out bygenerating plasma by exciting a single kind or a plurality of kinds ofgases selected from the group consisting of Ar, H, F and O. Further, itis preferable to carry out an annealing operation for degassing invacuum in order to remove moisture or other gas included in thesubstrate and the substrate may be carried to the pretreatment chamber103 connected to the carrying chamber 102 to anneal.

Successively, the substrate is carried from the carrying chamber 102 tothe delivery chamber 105 and from the delivery chamber 105 to thecarrying chamber 104 a without being exposed to the atmosphere. Further,an organic compound layer comprising low molecules for constituting ahole transporting layer or a light emitting layer is formed on the holeinjecting layer (CuPc) provided on the entire face of the substrate.Although for a whole of a light emitting element, an organic compoundlayer indicating light emittance of single color (specifically, whitecolor), or full color (specifically, red color, green color, blue color)can be formed, in this example, an explanation will be given of anexample of forming organic compound layers indicating light emittance ofred color, green color, blue color at the respective deposition chambers106R, 106G and 106B by an evaporation method.

First, the respective deposition chambers 106R, 106G and 106B will beexplained. The respective deposition chamber 106R, 106G and 106B areinstalled with movable evaporation source holders described inEmbodiments 1 and 2. A plurality of the evaporation source holders areprepared, a first evaporation source holder is filled with an ELmaterial for forming a hole transporting layer of each color, a secondevaporation source holder is filled with an EL material for forming alight emitting layer of each color, a third evaporation source holder isfilled with an EL material for forming an electron transporting layer ofeach color and a fourth evaporation source holder is filled with an ELmaterial for forming an electron injecting layer of each color and therespective evaporation source holders are installed at the respectivedeposition chambers 106R, 106G and 106B under the state.

In installing the substrate to the respective deposition chambers, it ispreferable to use the fabricating system described in Embodiment 3 andinstall vessels (representatively, crucibles) previously contained withthe EL materials by the material maker directly to the depositionchambers. Further, in installing the vessel, it is preferable to installthe vessel without being brought into contact with the atmosphere and incarrying the vessel from the material maker, it is preferable tointroduce the crucible into the deposition chamber in a state of beinghermetically sealed in the second vessel. Preferably the installingchambers 126R, 126G and 126B having vacuuming means connected to therespective deposition chambers 106R, 106G and 106B are brought intovacuum or in an inert gas atmosphere and under the atmosphere, thecrucible is taken out from the second vessel and the crucible isinstalled at the deposition chamber. Thereby, the crucible and the ELmaterial contained in the crucible can be prevented from contamination.

Next, a deposition step will be explained. First, a metal mask containedin the mask stock chamber 124 is carried to install at the depositionchamber 106R. Further, the hole transporting layer is formed by usingthe mask. In the example, a film of α-NPD is formed by 60 nm.Thereafter, by using same mask, a light emitting layer of red color isformed and the electron transporting layer and the electron injectinglayer are successively formed. According to the example, a film of Alq₃added with DCM is formed by 40 nm as the light emitting layer, a film ofAlq₃ is formed by 40 nm as an electron transporting layer and a layer ofCaF₂ is formed by 1 nm as the electron injecting layer.

Specifically, at the deposition chamber 106R, in the state of installingthe mask, the first evaporation source holder installed with the ELmaterial of the hole transporting layer, the second evaporation sourceholder installed with the EL material of the light emitting layer, thethird evaporation source holder installed with the EL material of theelectron transporting layer and the fourth evaporation source holderinstalled with the electron injecting layer are successively moved tocarry out film formation. Further, in forming the films, the organiccompounds are vaporized by resistance heating and in forming the films,the organic compounds are scattered to the direction of the substrate byopening shutters (not illustrated) provided at the evaporation sourceholders. The vaporized organic compounds are scattered upwardly andvapor-deposited to the substrate by passing an opening portion (notillustrated) provided at the metal mask (not illustrated) pertinentlyinstalled to form the films.

In this way, without being opened to the atmosphere, in the singleforming chamber, the light emitting element (from hole transportinglayer to electron injecting layer) emitting light in red color can beformed. Further, the layers continuously formed in the single depositionchamber are not limited to the hole transporting layer through theelectron injecting layer but the layers can pertinently be set by aperson for embodying the invention.

Further, the substrate formed with the light emitting element in redcolor is carried to the deposition chamber 106G by a carrying mechanism104 b. Further, a metal mask contained at the mask stock chamber 124 iscarried to install at the deposition chamber 106G. Further, as the mask,the mask in forming the light emitting element in red color may beutilized. Further, the hole transporting layer is formed by using themask. In the example, a film of α-NPD is formed by 60 nm. Thereafter,the light emitting layer of green color is formed and the electrontransporting layer and the electron injecting layer are successivelyformed by using the same mask. In the example, a film of Alq₃ added withDMQD is formed by 40 nm as the light emitting layer, a film of Alq₃ isformed by 40 nm as the electron transporting layer and a film of CaF₂ isformed by 1 nm as the electron injecting layer.

Specifically, in the deposition chamber 106G, in a state of installingthe mask, the first evaporation source holder installed with the ELmaterial of the hole transporting layer, the second evaporation sourceholder installed with the EL material of the light emitting layer, thethird evaporation source holder installed with the EL material of theelectron transporting layer and the fourth evaporation source holderinstalled with the EL material of the electron injecting layer aresuccessively moved to carry out film formation. Further, in forming thefilms, the organic compounds are vaporized by resistance heating and informing the films, the organic compounds are scattered in the directionof the substrate by opening shutters (not illustrated) provided at theevaporation source holders. The vaporized organic compounds arescattered upwardly and vapor-deposited to the substrate by passing anopening portion (not illustrated) provided at the metal mask (notillustrated) pertinently installed to form the films.

In this way, without being opened to the atmosphere, in the singledeposition chamber, a light emitting element (from hole transportinglayer to electron injecting layer) emitting light in green color can beformed. Further, the layers continuously formed in the single depositionchamber are not limited to the hole transporting layer through theelectron injecting layer but the layers may pertinently be set by theperson for embodying the invention.

Further, the substrate formed with the light emitting element in greencolor is carried to the deposition chamber 106B by the carryingmechanism 104 b. Further, a metal mask contained in the mask stockchamber 124 is carried to install at the deposition chamber 106B.Further, as the mask, the mask in forming the light emitting element inred color or green color may be utilized. Further, films functioning asthe hole transporting layer and a light emitting layer in blue color areformed by using the mask. In the example, a film of α-NPD is formed by60 nm. Thereafter, a blocking layer is formed and the electrontransporting layer and the electron injecting layer are successivelyformed by using the same mask. In the example, a film of BCP is formedby 10 nm as the blocking layer, a film of Alq₃ is formed by 40 nm as theelectron transporting layer and a film of CaF₂ is formed by 1 nm aselectron injecting layer.

Specifically, in the deposition chamber 106B, in a state of installingthe mask, the first evaporation source holder installed with the ELmaterials of the hole transporting layer and the light emitting layer inblue color, the second evaporation source holder installed with the ELmaterial of the blocking layer, the third evaporation source holderinstalled with the EL material of the electron transporting layer andthe fourth evaporation source holder installed with the electroninjecting layer are successively moved to carry out film formation.Further, in forming the films, the organic compounds are vaporized byresistance heating and in forming the films, the organic compounds arescattered in the direction of the substrate by opening shutters (notillustrated) provided at the evaporation source holders. The vaporizedorganic compounds are scattered upwardly and vapor-deposited to thesubstrate by passing an opening portion (not illustrated) provided atthe metal mask (not illustrated) pertinently installed to form thefilms.

In this way, without being opened to the atmosphere, in the singledeposition chamber, the light emitting element (hole transporting layerthrough electron injecting layer) emitting light in green color can beformed. Further, the layers continuously formed in the single depositionchamber are not limited to the hole transporting layer to the electroninjecting layer but may pertinently be set by the person for embodyingthe invention.

Further, an order of forming the films of the respective colors is notlimited to that of the example but may pertinently be set by the personfor embodying the invention. Further, the hole transporting layer, theelectron transporting layer, or the electron injecting layer can beshared by the respective colors. For example, at the deposition chamber106H, the hole injecting layer or the hole transporting layer common tothe light emitting elements of red color, green color and blue color maybe formed, and the light emitting layers of the respective colors may beformed at the respective deposition chambers 106R, 106G and 106B and theelectron transporting layer or the electron injecting layer common tothe light emitting elements of red color, green color and blue color maybe formed at the deposition chamber 106E. Further, at each depositionchamber, the organic compound layer indicating light emittance of asingle color (specifically, white color) can also be formed.

Further, the films can simultaneously be formed at the respectivedeposition chambers 106R, 106G and 106B and by successively moving therespective deposition chambers, the light emitting element canefficiently be formed and tact of the light emitting device is promoted.Further, when a certain deposition chamber is subjected to maintenance,the respective light emitting elements can be formed at remainingdeposition chambers and the throughput of the light emitting device ispromoted.

Further, when the evaporation method is used, it is preferable to carryout evaporation at the deposition chamber vacuumed such that the vacuumdegree becomes equal to or lower than 5×10⁻³ Torr (0.665 Pa),preferably, 10⁻⁴ through 10⁻⁶ Pa.

Successively, after carrying the substrate from the carrying chamber 104a to the delivery chamber 107, further, without being brought intocontact with the atmosphere, the substrate is carried from the deliverychamber 107 to the carrying chamber 108. By the carrying mechanisminstalled at inside of the carrying chamber 108, the substrate iscarried to the deposition chamber 110 and a cathode (lower layer)comprising a very thin metal film (film formed by an alloy of MgAg,MgIn, AlLi, CaN or the like or an element belonging to group 1 or group2 of the periodic table and aluminum by a common evaporation method) isformed by an evaporation method using resistance heating. After formingthe cathode (lower layer) comprising the thin metal layer, the substrateis carried to the deposition chamber 109, by using sputtering method acathode (upper layer) comprising a transparent conductive film (ITO(indium oxide tin oxide alloy), indium oxide zinc oxide alloy(In₂O₃—ZnO), zinc oxide (ZnO) or the like) is formed and the cathodecomprising the laminated layers of the thin metal layer and transparentconductive film is pertinently formed.

By the above-described steps, the light emitting element having thelaminated layers structure shown in FIGS. 10A and 10B is formed.

Successively, without being brought into contact with the atmosphere,the substrate is carried from the carrying chamber 108 to the depositionchamber 113 and a protective film comprising a silicon nitride film or asilicon nitrooxide film is formed. In this case, inside of thedeposition chamber 113 is provided with a sputtering device having atarget comprising silicon, a target comprising silicon oxide or a targetcomprising silicon nitride. For example, the silicon nitride film can beformed by using a target comprising silicon and constituting theatmosphere of the deposition chamber by a nitrogen atmosphere or anatmosphere including nitrogen and argon.

Successively, the substrate formed with the light emitting element iscarried from the carrying chamber 108 to the delivery chamber 111 andthe from the delivery chamber 111 to the carrying chamber 114 withoutbeing brought into contact with the atmosphere. Successively, thesubstrate formed with the light emitting element is carried from thecarrying chamber 114 to the sealing chamber 116. Further, it ispreferable to prepare a sealing substrate provided with a sealing memberat the sealing chamber 116.

The sealing substrate is prepared by setting the sealing substrate tothe sealing substrate loading chamber 117 from outside. Further, it ispreferable to anneal the sealing substrate previously in vacuum in orderto remove an impurity of moisture or the like, for example, to anneal atinside of the sealing substrate loading chamber 117. Further, when thesealing member for pasting together with the substrate provided with thelight emitting element at the sealing substrate, after subjecting thecarrying chamber 108 to the atmospheric pressure, the sealing member isformed at the sealing substrate between the sealing substrate loadingchamber and the carrying chamber 114 and the sealing substrate formedwith the sealing member is carried to the sealing chamber 116. Further,a desiccant may be provided to the sealing substrate in the sealingsubstrate loading chamber.

Successively, in order to degas the substrate provided with the lightemitting element, after annealing in vacuum or an inert atmosphere, thesealing substrate provided with the sealing member and the substrateformed with the light emitting element are pasted together. Further,nitrogen or an inert gas is filled in a hermetically sealed space.Further, although an example of forming the sealing member at thesealing substrate is shown here, the invention is not particularlylimited thereto but the sealing member may be formed at the substrateformed with the light emitting element.

Successively, a pair of the substrates pasted together is irradiatedwith UV light by an ultraviolet ray irradiating mechanism provided atthe sealing chamber 116 to thereby cure the sealing member. Further,although an ultraviolet ray cured resin is used as the sealing member,so far as the sealing member is an adhering member, the sealing memberis not particularly limited thereto.

Successively, the pair of substrates pasted together is carried from thesealing chamber 116 to the carrying chamber 114 and from the carryingchamber 114 to the take-out chamber 119 and taken out.

As described above, by using the fabricating device shown in FIG. 12,the light emitting element is not exposed to the atmosphere untilcompletely sealing the light emitting element into the hermeticallysealed space and therefore, a highly reliable light emitting device canbe fabricated. Further, although in the carrying chamber 114, vacuum andthe nitrogen atmosphere under the atmospheric pressure are repeated, itis preferable that vacuum is always maintained in the carrying chambers102, 104 a and 108.

Further, a fabricating device of an in-line system can also beconstituted.

Further, a light emitting element having a light emitting directionreverse to that in the laminated layers structure can also be formed bycarrying a transparent conductive film as an anode to the fabricatingdevice shown in FIG. 12.

Further, the example can freely combined with Embodiments 1 through 3and Example 1.

Example 3

In the example, FIG. 13 shows an example of a fabricating device of amultichamber system fully automating fabrication from the firstelectrode to sealing different from that of Example 2.

FIG. 13 shows a multichamber fabricating device including gates 100 athrough 100 s, the take-out chamber 119, the carrying chambers 104; 108,114 and 118, the delivery chambers 105 and 107, the preparing chamber101, a first deposition chamber 106A, a second deposition chamber 10613,a third deposition chamber 106C, a fourth deposition chamber 106D, otherdeposition chambers 109 a, 109 b, 113 a and 113 b, processing chambers120 a and 120 b, installing chambers installed with evaporation sources126A, 126B, 126C and 126D, pretreatment chambers 103 a, 103 b, a firstsealing chamber 116 a, a second sealing chamber 116 b, a first stockchamber 130; a second stock chamber 130 b, the cassette chambers 111 aand 111 b, the tray mounting stage 121 and the cleaning chamber 122.

The following shows a procedure of carrying a substrate previouslyprovided with a thin film transistor, an anode and an insulator coveringan end portion of the anode to the fabricating device shown in FIG. 13and of fabricating a light emitting device.

First, the substrate is set to the cassette chamber 111 a or thecassette chamber 111 b. When the substrate is a large-sized substrate(for example, 300 mm×360 mm), the substrate is set to the cassettechamber 111 a or 111 b and when the substrate is the normal substrate(for example, 127 mm×127 mm), the substrate is carried to the tray tomounting stage. 121 and a plurality of the substrates are set to a tray(for example, 300 mm×360 mm).

Successively, the substrate provided with a plurality of thin filmtransistors, anodes and insulators covering end portions of the anodesis carried to the carrying chamber 118 and carried to the cleaningchamber 122 to remove an impurity (small particle or the like) at thesurface of the substrate by a solution. When the substrate is cleaned atthe cleaning chamber 122, a face of the substrate to be deposited with afilm is set to direct downwardly under the atmospheric pressure.

Further, when a film including an organic compound formed at a uselessportion is intended to remove, the substrate may be carried to thepretreatment chamber 103 and a laminated layer of the organic compoundfilm may selectively be removed. The pretreatment chamber 103 includesplasma generating means for carrying out dry etching by generatingplasma by exciting a single kind or a plurality of kinds of gasesselected from the group consisting of Ar, H, F and O. Further, in orderto remove moisture included in the substrate or other gas or reduceplasma damage, it is preferable to carry out annealing operation invacuum and the substrate may be carried to the pretreatment chamber 103and subject the substrate to annealing operation (for example, UVirradiation). Further, in order to remove moisture included in anorganic resin material or other gas, the substrate may be heated under alow pressure atmosphere at the pretreatment chamber 103.

Successively, the substrate is carried from the carrying chamber 118provided with the substrate carrying mechanism to the preparing chamber101. According to the fabricating device of the example, the preparingchamber 101 is provided with a substrate reversing mechanism to enableto reverse the substrate pertinently. The preparing chamber 101 isconnected to a vacuuming chamber and after vacuuming, it is preferableto subject the preparing chamber 101 to the atmospheric pressure byintroducing an inert gas.

Successively, the substrate is carried to the carrying chamber 104 aconnected to the preparing chamber 101. It is preferable to maintainvacuum by previously vacuuming the carrying chamber 104 a such thatmoisture or oxygen is present as less as possible at inside thereof.

Further, the vacuuming chamber is provided with a turbo-molecular pumpof a magnetic levitation type, a cryopump or a dray pump. Thereby, theultimate vacuum degree of the carrying chamber connected to thepreparing chamber can be made to fall in a range of 10⁻⁵ through 10⁻⁴ Paand reverse diffusion of impurity from a pump side and the exhaustsystem can be controlled. In order to prevent an impurity from beingintroduced into the device, as a gas to be introduced, an inert gas ofnitrogen or rare gas is used. The gas is introduced into the devicewhich is highly purified by a gas refiner before being introduced intothe device is used. Therefore, it is necessary to provide a gas refinersuch that the gases are introduced into the evaporation device afterhaving been highly purified. Thereby, oxygen or water included in thegas and other impurity can previously be removed and therefore,impurities can be prevented from being introduced into the device.

Successively, the substrate is carried from the carrying chamber 104 ato the first through the fourth deposition chambers 106A through 106D.Further, an organic compound layer comprising low molecules forconstituting a hole injecting layer, a hole transporting layer or alight emitting layer is formed.

Although for whole of a light emitting element, an organic compoundlayer indicating light emittance of a single color (specifically, whitecolor) or full color (specifically, red color, green color, blue color)can be formed, in this example, an explanation will be given of anexample of simultaneously forming an organic compound layer indicatinglight emittance of white color at the respective deposition chambers106A, 106B, 106C and 106D. Further, simultaneous film formationmentioned here signifies that the film formations are carried outsubstantially simultaneously in starting film formation and in finishingfilm formation at the respective deposition chambers and indicates thatthe deposition processings are carried out substantially in parallel.

Further, although when light emitting layers having differentluminescent colors are laminated, an organic compound layer indicatinglight emittance of white color is grossly classified into threewavelength type including three original colors of red color, greencolor and blue color and two wavelength type using a relationship ofcomplementary color of blue color/yellow color or bluish greencolor/orange color, in this example, one example of providing a whitecolor light emitting element using the three wavelengths type will beexplained.

First, the respective deposition chambers 106A, 106B, 106C and 106D willbe explained. Each of the deposition chambers 106A, 106B, 106C and 106Dis installed with a movable evaporation source holder described inEmbodiment 1. A plurality of the evaporation source holders areprepared, a first evaporation source holder is filled with aromaticdiamine (TPD) for forming a white color light emitting layer, a secondevaporation source holder is filled with p-EtTAZ for forming a whitecolor luminescent layer, a third evaporation source holder is filledwith Alq₃ for forming a white color luminescent layer, a fourthevaporation source holder is filled with an El material constituted byadding NileRed which is a red color luminescent colorant to Alq₃ forforming a white color luminescent layer, a fifth evaporation sourceholder is filled with Alq₃ and the evaporation source holders areinstalled at the respective deposition chambers under the state.

It is preferable to install the EL materials to the deposition chambersby using the fabricating system described in Embodiment 3. That is, itis preferable to form the film by using a vessel (representatively,crucible) contained with the EL material previously by a material maker.Further, when installed, it is preferable to install the cruciblewithout being brought into contact with the atmosphere and whentransferred from the material maker, it is preferable that the crucibleis introduced into the deposition chamber in a state of beinghermetically sealed in the second vessel. Preferably, the installingchambers 126A, 126B, 126C and 126D having vacuuming means connected tothe respective deposition chambers 106A, 106B, 106C and 106D are broughtin vacuum or an inert gas atmosphere, a crucible is taken out from thesecond vessel under the atmosphere and the crucible is installed to thedeposition chamber. Thereby, the crucible and the EL material containedin the crucible can be prevented from being contaminated. Further, theinstalling chambers 126A, 126B, 126C and 126D can stock a metal mask.

Next, deposition steps will be explained. In the deposition chamber106A, a mask is carried and installed from the installing chamber asnecessary. Thereafter, the first through the fifth evaporation sourceholders start moving successively and evaporation is carried out for thesubstrate. Specifically, TPD is sublimated from the first evaporationsource holder by heating and vapor-deposited over the entire face of thesubstrate. Thereafter, p-EtTAZ is sublimated from the second evaporationsource holder, Alq₃ is sublimated from the third evaporation sourceholder, Alq₃:NileRed is sublimated from the fourth evaporation sourceholder and Alq_(a) is sublimated from the fifth evaporation sourceholder and vapor-deposited over the entire face of the substrate.

Further, when the evaporation method is used, it is preferable to carryout evaporation at the deposition chamber vacuumed in which the vacuumdegree becomes 5×10⁻³ Torr (0.665 Pa) or lower, preferably 10 through10⁻⁶ Pa.

Further, the evaporation source holders installed with the respective ELmaterials are provided at the respective deposition chambers and also inthe deposition chambers 106B through 106D, evaporation is carried outsimilarly. That is, the deposition processing can be carried out inparallel. Therefore, even when a certain deposition chamber is subjectedto maintenance or cleaning, the deposition processing can be carried outat remaining deposition chambers, tact of film formation is promoted andtherefore, the throughput of the light emitting device can be promoted.

Successively, after carrying the substrate from the carrying chamber 104a to the delivery chamber 105, further, without being brought intocontact with the atmosphere, the substrate is carried from the deliverychamber 105 to the carrying chamber 108.

Successively, by the carrying mechanism installed at inside of thecarrying chamber 108, the substrate is carried to the deposition chamber109 a or the deposition chamber 109 b to form a cathode. The cathode maybe formed by laminated films of a to cathode (lower layer) comprising avery thin metal film (film formed by an alloy of MgAg, MgIn, AlLi, CaNor the like or an element belonging to group 1 or group 2 of theperiodic table and aluminum by a common evaporation method) formed by anevaporation method using resistance heating, and a cathode (upper layer)comprising a transparent conductive film (ITO (indium oxide indium tinalloy), indium oxide zinc is oxide alloy (In₂O₂—ZnO), zinc oxide (ZnO)or the like) formed by a sputtering method. For that purpose, it ispreferable to arrange a deposition chamber for forming a very thin metalfilm at the fabricating device.

By the above-described steps, the light emitting element having thelaminated layers structure shown in FIGS. 10A and 10B is formed.

Successively, without being brought into contact with the atmosphere,the substrate is carried from the carrying chamber 108 to the depositionchamber 113 a or the deposition chamber 113 b and a protective filmcomprising a silicon nitride film or a silicon nitroxide film is formed.In this case, inside of the deposition chamber 113 a or 113 b isprovided with a target comprising silicon, or a target comprisingsilicon oxide, or a target comprising silicon nitride. For example, asilicon nitride film can be formed by using a target comprising siliconand constituting an atmosphere of the deposition chamber by a nitrogenatmosphere or an atmosphere including nitrogen and argon.

Successively, without bringing the substrate formed with the lightemitting element in contact with the atmosphere, the substrate iscarried from the carrying chamber 108 to the delivery chamber 107 andcarried from the delivery chamber 107 to the carrying chamber 114.

Successively, the substrate formed with the light emitting element iscarried from the carrying chamber 114 to the processing chamber 120 a orthe processing chamber 120 b. At the processing chamber 120 a or 120 b,a sealing member is formed on the substrate. Further, although in theexample, an ultraviolet ray cured resin is used for the sealing member,for far as the sealing member is an adhering member, the sealing memberis not particularly limited thereto. Further, the sealing member may beformed after setting the processing chamber 120 a or 120 b to theatmospheric pressure. Further, the substrate formed with the sealingmember is carried to the first sealing chamber 116 a or the secondsealing chamber 116 b via the carrying chamber 114.

Further, a sealing substrate formed with a color conversion layer, lightblocking layer (BM) and an overcoat layer is carried to the first stockchamber 130 a or the second stock chamber 130 b. Further, a sealingsubstrate laminated not with the color conversion layer but with a colorfilter or the color conversion layer and the color filter as shown byFIGS. 18 a and 18 c may be provided. Thereafter, the sealing substrateis carried to the first sealing chamber 130 a or the second sealingchamber 130 b.

Successively, by carrying out annealing operation in vacuum or in aninert atmosphere, the substrate provided with the light emitting elementis degassed and thereafter, the substrate provided with the sealingmember and the substrate formed with the color conversion layer or thelike are pasted together. Further, nitrogen or an inert gas is filled ina hermetically sealed space. Further, although an example of forming thesealing member at the substrate is shown here, the invention is notparticularly limited thereto but the sealing material may be formed atthe sealing substrate. That is, the sealing substrate may be formed withthe color conversion layer, the color blocking layer (BM), the overcoatlayer and the sealing member and thereafter carried to the first stockchamber 130 a or the second stock chamber 130 b.

Successively, the pair of substrates pasted together are irradiated withUV light using an UV light irradiation mechanism provided in the firstsealing chamber 116 a or the second sealing chamber 116 b to cure thesealing member.

Successively, the pair of substrates pasted together are carried fromthe sealing chamber 116 to the carrying chamber 114 and from thecarrying chamber 114 to the take-out chamber 119 and taken out.

As described above, by using the fabricating device shown in FIG. 13,the light emitting element is not exposed to the atmosphere until thelight emitting element is sealed in the hermetically sealed space andtherefore, a highly reliable light emitting device can be fabricated.Further, although in the carrying chamber 114, vacuum and a nitrogenatmosphere under the atmospheric pressure are repeated, it is preferablethat the vacuum is always maintained in the carrying chambers 102 and104 a and 108.

Further, an in-line system fabricating device can be constituted.

It is also possible to carry a transparent conductive film as an anodeto the fabricating device shown in FIG. 13 and form a light emittingelement having a light emitting direction reverse to that in thelaminated layers structure.

FIG. 15 shows an example of a fabricating device different from that ofFIG. 13. Film formation may be carried out similarly to FIG. 13 andtherefore; a detailed explanation of deposition steps will be omitted, apoint of difference in the constitution of the fabricating deviceresides in that a delivery chamber 111 and a carrying chamber 117 areadditionally provided and the carrying chamber 117 is provided with asecond sealing chamber 116 b, a second stock chamber 130 b anddeposition chambers (for forming seal) 120 c and 120 d. That is, in FIG.15, all of the deposition chamber, the sealing chamber and the stockchamber are directly connected to a certain carrying chamber andtherefore, the substrate is carried efficiently, further, the lightemitting device can be fabricated in parallel and the throughput of thelight emitting device is promoted.

Further, the parallel processing method of the light emitting device ofthe example can be combined with Example 2. That is, the depositionprocessing may be carried out by providing a plurality of the depositionchambers 106R, 106G and 106B.

Further, the example can freely be combined with the embodiments andExample 1.

Example 4

Given as examples of an electric appliance that employs a light emittingdevice manufactured in accordance with the present invention are videocameras; digital cameras, goggle type displays (head mounted displays),navigation systems, audio reproducing devices (such as car audio andaudio components), laptop computers, game machines, portable informationterminals (such as mobile computers, cellular phones, portable gamemachines, and electronic books), and image reproducing devices equippedwith recording media (specifically, devices with a display device thatcan reproduce data in a recording medium such as a digital versatiledisk (DVD) to display an image of the data). Wide viewing angle isimportant particularly for portable information terminals because theirscreens are often slanted when they are looked at. Therefore it ispreferable for portable information terminals to employ the lightemitting device using the light emitting element. Specific examples ofthese electric appliance are shown in FIGS. 16A to 16H.

FIG. 16A shows a light emitting device, which is composed of a case2001, a support base 2002, a display unit 2003, speaker units 2004, avideo input terminal 2005, etc. The light emitting device manufacturedin accordance with the present invention can be applied to the displayunit 2003. In addition, the light emitting device shown in FIG. 16A canbe completed by the present invention. Since the light emitting devicehaving the light emitting element is self-luminous, the device does notneed back light and can make a thinner display unit than liquid crystaldisplay devices. The light emitting device refers to all light emittingdevices for displaying information, including ones for personalcomputers, for TV broadcasting reception, and for advertisement.

FIG. 16B shows a digital still camera, which is composed of a main body2101, a display unit 2102, an image receiving unit 2103, operation keys2104, an external connection port 2105, a shutter 2106, etc. The lightemitting device manufactured in accordance with the present inventioncan be applied to the display unit 2102. The digital camera shown inFIG. 16B can be completed by the present invention.

FIG. 16C shows a laptop computer, which is composed of a main body 2201,a case 2202, a display unit 2203, a keyboard 2204, an externalconnection port 2205, a pointing mouse 2206, etc. The light emittingdevice manufactured in accordance with the present invention can beapplied to the display unit 2203. The laptop computer shown in FIG. 16Ccan be completed by the present invention.

FIG. 16D shows a mobile computer, which is composed of a main body 2301,a display unit 2302, a switch 2303, operation keys 2304, an infraredport 2305, etc. The light emitting device manufactured in accordancewith the present invention can be applied to the display unit 2302. Themobile computer shown in FIG. 16D can be completed by the presentinvention.

FIG. 16E shows a portable image reproducing device equipped with arecording medium (a DVD player, to be specific). The device is composedof a main body 2401, a case 2402, a display unit A 2403, a display unitB 2404, a recording medium (DVD or the like) reading unit 2405,operation keys 2406, speaker units 2407, etc. The display unit A 2403mainly displays image information whereas the display unit B 2404 mainlydisplays text information. The light emitting device manufactured inaccordance with the present invention can be applied to the displayunits A 2403 and B 2404. The image reproducing device equipped with arecording medium also includes home-video game machines. The DVD playershown in FIG. 16E can be completed by the present invention.

FIG. 16F shows a goggle type display (head mounted display), which iscomposed of a main body 2501, display units 2502, and arm units 2503.The light emitting device manufactured in accordance with the presentinvention can be applied to the display units 2502. The goggle typedisplay shown in FIG. 16F can be completed by the present invention.

FIG. 16G shows a video camera, which is composed of a main body 2601, adisplay unit 2602, a case 2603, an external connection port 2604, aremote control receiving unit 2605, an image receiving unit 2606, abattery 2607, an audio input unit 2608, operation keys 2609 etc. Thelight emitting device manufactured in accordance with the presentinvention can be applied to the display unit 2602. The video camerashown in FIG. 16G can be completed by the present invention.

FIG. 16H shows a cellular phone, which is composed of a main body 2701,a case 2702, a display unit 2703, an audio input unit 2704, an audiooutput unit 2705, operation keys 2706, an external connection port 2707,an antenna 2708, etc. The light emitting device manufactured inaccordance with the present invention can be applied to the display unit2703. If the display unit 2703 displays white letters on blackbackground, the cellular phone consumes less power. The cellular phoneshown in FIG. 16H can be completed by the present invention.

If the luminance of luminescence materials is raised in future, thelight emitting device can be used in front or rear projectors byenlarging outputted light that contains image information through a lensor the like and projecting the light.

These electric appliances now display with increasing frequencyinformation sent through electronic communication lines such as theInternet and CATV (cable television), especially, animation information.Since luminescence materials have very fast response speed, the lightemitting device is suitable for animation display.

According to the invention, the distance between the substrate and theevaporation source holder can be shortened and the small-sized formationof the evaporation device can be achieved. Further, since theevaporation device becomes small-sized, adherence of the sublimatedevaporation material to the inner wall or the adherence preventiveshield at inside of the deposition chamber is reduced and theevaporation material can effectively be utilized. Further, in theevaporation method of the invention, it is not necessary to rotate thesubstrate and therefore, the evaporation device capable of dealing witha large area substrate can be provided.

Further, the invention can provide the fabricating device in which theplurality of deposition chambers for carrying out the evaporationprocessings are continuously arranged. In this way the parallelprocessings are carried out in the plurality of deposition chambers andtherefore, throughput of the light emitting device is promoted.

Further, the invention can provide the fabricating system capable ofinstalling the vessel filled with the evaporation material directly tothe evaporation system without exposing the vessel to the atmosphere. Bythe invention, handling of the evaporation material is facilitated andan impurity can be avoided from being mixed to the evaporation material.By the fabricating system, the vessel filled by the material maker candirectly be installed to the evaporation device and therefore, oxygen orwater can be prevented from adhering to the evaporation material andfurther high purity formation of the light emitting element in thefuture can be dealt with.

1. An evaporation apparatus comprising: a holder for supporting a substrate; and an evaporation source holder for supporting an evaporation material, wherein the evaporation source holder is arranged to irreversibly move along a route, and wherein the route allows the evaporation source holder to be placed in a region, which does not overlap with the substrate, before evaporation, to be moved under the substrate while evaporating the evaporation material in the evaporation source holder, and to be returned to its original position after the evaporation.
 2. The evaporation apparatus according to claim 1, wherein the route is arranged so that the evaporation source holder is moved in a first direction during the evaporation, and wherein the first direction is parallel to one of sides of the substrate.
 3. The evaporation apparatus according to claim 2, wherein the route is arranged so that the evaporation source holder is moved in the first direction a plurality of times during the evaporation.
 4. The evaporation apparatus according to claim 2, wherein the route is further arranged so that the evaporation source holder is moved in a second direction during the evaporation, and wherein the second direction is perpendicular to the first direction.
 5. The evaporation apparatus according to claim 4, wherein the route is arranged so that the evaporation source holder is moved in the second direction a plurality of times during the evaporation.
 6. The evaporation apparatus according to claim 4, wherein the route consists of movement in the first direction and the second direction.
 7. The evaporation apparatus according to claim 1, wherein the holder is arranged to fix a position of the substrate during the evaporation.
 8. An evaporation apparatus comprising: a holder for supporting a substrate; a first evaporation source holder for supporting a first evaporation material; and a second evaporation source holder for supporting a second evaporation material, wherein the first evaporation source holder is arranged to irreversibly move along a route, wherein the second evaporation source holder is arranged to irreversibly move along the same route as the first evaporation source holder, wherein the route allows the first evaporation source holder and the second evaporation source holder to be placed in a region, which does not overlap with the substrate, before evaporation, to be moved under the substrate while evaporating the first evaporation material and the second evaporation material in the first evaporation source holder and the second evaporation source holder, respectively, and to be returned to their original positions after the evaporation.
 9. The evaporation apparatus according to claim 8, wherein the second evaporation source holder is arranged to evaporate the second evaporation material during the evaporation of the first evaporation material.
 10. The evaporation apparatus according to claim 8, wherein the route is arranged so that the first evaporation source holder and the second evaporation source holder are moved in a first direction during the evaporation, and wherein the first direction is parallel to one of sides of the substrate.
 11. The evaporation apparatus according to claim 10, wherein the route is arranged so that the first evaporation source holder and the second evaporation source holder are moved in the first direction a plurality of times during the evaporation.
 12. The evaporation apparatus according to claim 10, wherein the route is further arranged so that the first evaporation source holder and the second evaporation source holder are moved in a second direction during the evaporation, and wherein the second direction is perpendicular to the first direction.
 13. The evaporation apparatus according to claim 12, wherein the route is arranged so that the first evaporation source holder and the second evaporation source holder are moved in the second direction a plurality of times during the evaporation.
 14. The evaporation apparatus according to claim 12, wherein the route consists of movement in the first direction and the second direction.
 15. The evaporation apparatus according to claim 8, wherein the holder is arranged to fix a position of the substrate during the evaporation.
 16. A method of forming a film over a substrate by evaporation, the method comprising: moving an evaporation source holder, which is configured to support an evaporation material, along a route irreversibly while evaporating the evaporation material, wherein the route allows the evaporation source holder to be placed in a region, which does not overlap with the substrate, before the evaporation, to be moved under the substrate while evaporating the evaporation material in the evaporation source holder, and to be returned to its original position after the evaporation.
 17. The method according to claim 16, wherein the route is arranged so that the evaporation source holder is moved in a first direction during the evaporation, and wherein the first direction is parallel to one of sides of the substrate.
 18. The method according to claim 17, wherein the route is arranged so that the evaporation source holder is moved in the first direction a plurality of times during the evaporation.
 19. The method according to claim 17, wherein the route is further arranged so that the evaporation source holder is moved in a second direction during the evaporation, and wherein the second direction is perpendicular to the first direction.
 20. The method according to claim 19, wherein the route is arranged so that the evaporation source holder is moved in the second direction a plurality of times during the evaporation.
 21. The method according to claim 19, wherein the route consists of movement in the first direction and the second direction.
 22. The method according to claim 16, wherein a position of the substrate is fixed during the evaporation.
 23. A method of forming a film over a substrate by evaporation, the method comprising: moving a first evaporation source holder, which is configured to support a first evaporation material, along a route irreversibly while evaporating the first evaporation material; and moving the second evaporation source holder, which is configured to support a second evaporation material, along the same route as the first evaporation source holder irreversibly while evaporating the second evaporation material, wherein the route allows the first evaporation source holder and the second evaporation source holder to be placed in a region, which does not overlap with the substrate, before the evaporation, to be moved under the substrate while evaporating the first evaporation material and the second evaporation material in the first evaporation source holder and in the second evaporation source holder, respectively, and to be returned to their original positions after the evaporation.
 24. The method according to claim 23, wherein the route is arranged so that the first evaporation source holder and the second evaporation source holder are moved in a first direction during the evaporation, and wherein the first direction is parallel to one of sides of the substrate.
 25. The method according to claim 24, wherein the route is arranged so that the first evaporation source holder and the second evaporation source holder are moved in the first direction a plurality of times during the evaporation.
 26. The method according to claim 24, wherein the route is further arranged so that the first evaporation source holder and the second evaporation source holder are moved in a second direction during the evaporation, and wherein the second direction is perpendicular to the first direction.
 27. The method according to claim 26, wherein the route is arranged so that the first evaporation source holder and the second evaporation source holder are moved in the second direction a plurality of times during the evaporation.
 28. The method according to claim 26, wherein the route consists of movement in the first direction and the second direction.
 29. The method according to claim 23, wherein a position of the substrate is fixed during the evaporation. 